Publication 2008
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Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
Japanese Journal of Applied Physics Vol. 47, No. 10R, pp. 7803-7806 (2008).
DOI: 10.1143/JJAP.47.7803
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High Resolution X-ray Diffraction and Raman Scattering Studies of
Cubic-phase InN Films Grown by MBE
Saman Kuntharin, Sakuntam Sanorpim, Hiroyuki Yaguchi,
Yohei Iwahashi, Misao Orihara, Yasuto Hijakata and Sadafumi Yoshida
Advanced Materials Research Vols. 55-57, pp. 773-776 (2008).
DOI: 10.4028/www.scientific.net/AMR.55-57.773
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Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama,
Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
Physica E Vol. 40, No. 6, pp. 2110-2112 (2008).
DOI: 10.1016/j.physe.2007.10.047
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Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers
Go Shikata, Shigeru Hirano, Takeru Inoue, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and
Sadafumi Yoshida
Physica Status Solidi C Vol. 5, No. 6, pp. 1808-1810 (2008).
DOI: 10.1002/pssc.200778662
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Photoluminescence study of hexagonal InN/InGaN quantum well structures grown
on 3C-SiC (001) substrates by molecular beam epitaxy
Shigeru Hirano, Takeru Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi,
Sadafumi Yoshida, and Yasuo Hirabayashi
Physica Status Solidi C Vol. 5, No. 6, pp. 1730-1732 (2008).
DOI: 10.1002/pssc.200778606
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Photoluminescence of cubic InN films on MgO (001) substrates
Takeru Inoue, Yohei Iwahashi , Shingo Oishi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and
Sadafumi Yoshida
Physica Status Solidi C Vol. 5, No. 6, pp. 1579-1581 (2008).
DOI: 10.1002/pssc.200778505
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(In Japanese)
Single photon emission from locally doped semiconductors
Hiroyuki Yaguchi
Reports of research assisted by the Asahi Glass Foundation pp. 1-7 (2008).