Yaguchi

Presentation 2008


  • (In Japanese) 分光エリプソメトリによるSiC/酸化膜界面の光学的評価
    Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (P-61) (Tokyo, Japan)
    December 8, 2008
  • (In Japanese) 分光エリプソメータによるSiO2/SiC界面の光学的評価 　-紫外領域への拡張-
    Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (P-63) (Tokyo, Japan)
    December 8, 2008
  • (In Japanese) In-situ分光エリプソメータによるSiCの極薄膜厚領域における酸化過程の観察
    Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (P-65) (Tokyo, Japan)
    December 8, 2008
  • (In Japanese) 界面Si 及びC原子放出現象に基づくSiC酸化速度のモデル計算
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (P-66) (Tokyo, Japan)
    December 8, 2008
  • (In Japanese) 第一原理計算を用いた立方晶GaNの電気的特性解析
    Hiroshi Nakajima, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (P-72) (Tokyo, Japan)
    December 8, 2008
  • (In Japanese) SiC酸化膜界面の分光エリプソメトリによる評価
    Sadafumi Yoshida, Hiroyuki Yaguchi, Yasuto Hijikata
    SiC及び関連ワイドギャップ半導体研究会 第17回講演会 (V-1) (Tokyo, Japan)
    December 9, 2008
  • (In Japanese) エリプソメトリを用いた薄膜評価
    Hiroyuki Yaguchi
    日本学術振興会　薄膜第131委員会第4回基礎講座 (東京) October 24, 2008
  • Model Calculation of SiC Oxide Growth Rate based on the Silicon and Carbon Emission Model
    Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    7th European Conference on Silicon Carbide and Related Materials (WeP-18) (Barcelona, Spain)
    September 10, 2008
  • Characterization of 4H-SiC-SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
    Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    7th European Conference on Silicon Carbide and Related Materials (WeP-19) (Barcelona, Spain)
    September 10, 2008
  • Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In-Situ Spectroscopic Ellipsometry
    Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    7th European Conference on Silicon Carbide and Related Materials (WeP-20) (Barcelona, Spain)
    September 10, 2008
  • (In Japanese) Spectroscopic ellipsometry study on the electronic structure of GaAsN alloys
    Naoya Suzuki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Ryuji Katayama, Kentaro Onabe
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (4a-CF-11)（Kasugai, Japan）
    September 4, 2008
  • (In Japanese) Photoluminescence from isoelectronic traps in nitrogen δ-doped GaP (II)
    Masatoshi Ito, Toshiyuki Fukushima, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (4a-CF-15)（Kasugai, Japan）
    September 4, 2008
  • (In Japanese) Photoluminescence from isoelectronic traps in N δ-doped GaAs grown on variously oriented GaAs surfaces
    Toshiyuki Fukushima, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (4a-CF-16)（Kasugai, Japan）
    September 4, 2008
  • (In Japanese) Direct growth of InN on 4H-SiC(0001) substrates by RF-MBE
    Misao Orihara, Yasuhiro Tomita, Shin Takizawa, Takanori Sato, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (4p-CG-3)（Kasugai, Japan）
    September 4, 2008
  • (In Japanese) Bandgap narrowing and optical properties of III-V-N alloys
    Hiroyuki Yaguchi
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (3p-ZV-7)（Kasugai, Japan）
    September 3, 2008
  • (In Japanese) Characterization of SiC/Oxide Interfaces by Multi-angle Spectroscopic Ellipsometry (II)
    Takahiro Wakabayashi, Hideyasu Seki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics (2p-CE-12)（Kasugai, Japan）
    September 2, 2008
  • (In Japanese) 窒素をδドープしたGaAsにおける単一の等電子トラップからの発光
    Hiroyuki Yaguchi
    第4回量子材料セミナー（Chofu, Japan）
    July 23, 2008
  • (In Japanese) 局所ドーピング半導体による単一光子発生に関する研究
    Hiroyukk Yaguchi
    2008旭硝子財団助成研究発表会（Tokyo, Japan）
    July 15, 2008
  • High Resolution X-ray Diffraction and Raman Scattering Studies of Cubic-Phase InN Films Grown by MBE
    Saman Kuntharin, Sakuntam Sanorpim, Yohei Iwahashi, Hiroyuki Yaguchi, Akemi Nishimoto, Misao Orihara, Yasuto Hijikata, Sadafumi Yoshida
    Smart/Intelligent Materials and Nano Technology 2008 & 2nd Internatinal Workshop on Functional Materials and Nanomaterials (SmartMat-'08 & IWOFM-2) (Chiang Mai, Thailand)
    April 24, 2008
  • (In Japanese) RF-MBE growth of cubic InN films on 3C-SiS and theire properties
    Yasuhiro Tomita, Takeru Inoue, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yasuo Hirabayashi
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies(27p-B-6)（Funabashi, Japan）
    March 27, 2008
  • (In Japanese) Photoluminescence study of cubic InN grown by RF-MBE（II）
    Takeru Inoue, Go Shikata, Yusuke Tukagoshi, Yasuhiro Tomita, Hiroshi Nakajima, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (27p-B-7)（Funabashi, Japan）
    March 27, 2008
  • (In Japanese) Photoluminescence study of A-plane InN grown by RF-MBE
    Go Shikata, Takeru Inoue, Takanori Sato, Hideki Hirayama, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (27p-B-16)（Funabashi, Japan）
    March 27, 2008
  • (In Japanese) Observation of SiC oxication process in ultra-thin oxide regime studied by an in situ spectroscopin ellipsometer
    Toshiyuki Takaku, Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (28p-A-1)（Funabashi, Japan）
    March 28, 2008
  • (In Japanese) Characterization of SiC/Oxide Interfaces by Multi-angle Spectroscopic Ellipsometry
    Takahiro Wakabayashi, Hideyasu Seki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (28p-A-2)（Funabashi, Japan）
    March 28, 2008
  • (In Japanese) Characterization of SiO2/SiC interfaces by a spectroscopic ellipsometer　-Oxidation thickness dependence-
    Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (28p-A-3)（Funabashi, Japan）
    March 28, 2008
  • (In Japanese) Photoluminescence from isoelectronic traps in GaAs:N
    Toshiyuki Fukushima, Yuta Endo, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (29p-ZT-13)（Funabashi, Japan）
    March 29, 2008
  • (In Japanese) Study on the changes in the luminescence efficiency of GaInAsN alloys using Raman spectrosocpy
    Kentaro Tanioka, Ayumu Horiguchi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Ryuji Katayama, Kentaro Onabe, Masahiro Yoshita, Hidefumi Akiyama
    The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Relate Societies (29p-ZT-18)（Funabashi, Japan）
    March 29, 2008