Publication 1997

• Self Formation and Photoluminescence of II-VI Quantum Wires on GaAs(110) Surfaces
  B. P. Zhang, W.X. Wang, G. Isoya, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
  Nonlinear Optics, Vol. 18, No. 1-4, pp. 133-136 (1997).
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_1-xN_x Alloys: A Growth Interruption Study
  S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
  Japanese Journal of Applied Physics Vol. 36, No. 12A, pp. 7110-7118 (1997).
  DOI: 10.1143/JJAP.36.7110
• In-plane polarization properties of GaAsP/AlAs strained quantum wells on GaAs(113)A and (114)A substrates
  N. Hiroyasu, H. Yaguchi, K. Onabe, Y. Shiraki, R. Ito
  Institute of Physics Conference Series Vol. 155, pp. 771-774 (1997).
• The Gamma_c-Gamma_v Transition Energies of Al_xIn_1-xP Alloys
  Y. Ishitani, H. Hamada, S. Minagawa, H. Yaguchi and Y. Shiraki
  Japanese Journal of Applied Physics Vol. 36, No. 11, pp. 6607-6613 (1997).
  DOI: 10.1143/JJAP.36.6607
• Self Formation and Optical Properties of II-VI Semiconductor Wire Structures
  B. Zhang, W. Wang, T. Yasuda, Y. Li, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
  Japanese Journal of Applied Physics Vol. 36, No. 11B, pp. L1490-L1493 (1997).
  DOI: 10.1143/JJAP.36.L1490
• Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells
  X. Zhang, M. Ishikawa, H. Yaguchi, K. Onabe
  Surface Science Vol. 387, No. 1-3, pp. 371-382 (1997).
  DOI: 10.1016/S0039-6028(97)00401-9
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
  J. Wu, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki
  Applied Physics Letters Vol. 71, No. 15, pp. 2067-2069 (1997).
  DOI: 10.1063/1.119344
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
  J. Wu, H. Yaguchi, H. Nagasawa, Y. Yamaguchi, K. Onabe, Y. Shiraki and R. Ito
  Japanese Journal of Applied Physics Vol. 36, No. 7A, pp. 4241-4245 (1997).
  DOI: 10.1143/JJAP.36.4241
• Naturally formed ZnCdSe quantum dots on ZnSe (110) surfaces
  B. P. Zhang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, E. Edamatsu and T. Itoh
  Applied Physics Letters Vol. 70, No. 18, pp. 2413-2415 (1997).
  DOI: 10.1063/1.118888
• Metalorganic Vapor Phase Epitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs(111)B Substrates
  T. Tsujikawa, W. Pan, K. Momma, M. Kudo, K. Tanaka, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
  Japanese Journal of Applied Physics Vol. 36, No. 6B, pp. 4102-4106 (1997).
  DOI: 10.1143/JJAP.36.4102
• Nitrogen concentration dependence of photoluminescence decay time in GaP_1-xN_x alloys
  H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki and R. Ito
  Solid State Electronics Vol. 41, No. 2, pp. 231-233 (1997).
  DOI: 10.1016/S0038-1101(96)00206-7
• Photoluminescence excitation spectroscopy of GaP_1-xN_x Alloys: conduction band edge formation by nitrogen incorporation
  H. Yaguchi, S. Miyoshi, G. Biwa, M. Kibune, K. Onabe, Y. Shiraki and R. Ito
  Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 353-356 (1997).
  DOI: 10.1016/S0022-0248(96)00592-1
• A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure
  W. Pan, H. Yaguchi, Y. Hanamaki, M. Ishikawa, Y. Kaneko, K. Onabe, R Ito and Y. Shiraki
  Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 585-589 (1997).
  DOI: 10.1016/S0022-0248(96)00593-3
• High Quality Cubic GaN Growth on GaAs (100) Sbustrates by Metalorganic Vapor Phase Epitaxy
  J. Wu, H. Yaguchi, K. Onabe, Y. Shiraki, and R. Ito
  Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 194-195 (1997).
  DOI: 10.7567/SSDM.1997.C-5-4
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
  M. Ishikawa, W. Pan, Y. Kaneko, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki
  Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 342-343 (1997).
  DOI: 10.7567/SSDM.1997.B-11-6
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
  T. Tsujikawa, K. Momma, H. Yaguchi, K. Onabe, Y. Shiraki, and R. Itp
  Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 318-319 (1997).
  DOI: 10.7567/SSDM.1997.B-10-3