Yaguchi

Presentation 2007


  • (In Japanese) In-situ 分光エリプソメータによるSiC の極薄膜厚領域における酸化過程の観察
    Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第16回講演会 (P-42) (Nagoya, Japan)
    November 29, 2007
  • (In Japanese) 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法, 面方位依存性-(2)
    Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第16回講演会 (P-43) (Nagoya, Japan)
    November 29, 2007
  • (In Japanese) In-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第16回講演会 (P-44) (Nagoya, Japan)
    November 29, 2007
  • (In Japanese) SiC 酸化速度の極薄膜厚領域におけるモデル計算
    Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第16回講演会 (P-45) (Nagoya, Japan)
    November 29, 2007
  • Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
    Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi, and Sadafumi Yoshida
    International Conference on Silicon Carbide and Related Materials 2007 (Mo-P-63) (Otsu, Japan)
    October 15, 2007
  • Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    International Conference on Silicon Carbide and Related Materials 2007 (Mo-P-64) (Otsu, Japan)
    October 15, 2007
  • Improvement of the Surface Morphology of a-Plane InN Using Low-Temperature InN Buffer Layers
    Go Shikata, Shigeru Hirano, Takeru Inoue, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    7th International Conference on Nitride Semiconductors (BB3) (Las Vegas, USA)
    September 20, 2007
  • Lattice Polarity Determination for GaN by Modulation Spectroscopy
    Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe
    7th International Conference on Nitride Semiconductors (JJ3) (Las Vegas, USA)
    September 20, 2007
  • Photoluminescence of Cubic InN Films on MgO(001) Substrates
    Takeru Inoue, Yohei Iwahashi, Shingo Oishi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    7th International Conference on Nitride Semiconductors (WP59) (Las Vegas, USA)
    September 19, 2007
  • Photoluminescence Study of Hexagonal InN/InGaN Quantum Well Structures Grown on 3C-SiC (001) Substrates by Molecular Beam Epitaxy
    Shigeru Hirano, Takeru Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    7th International Conference on Nitride Semiconductors (WP60) (Las Vegas, USA)
    September 19, 2007
  • (In Japanese) Characterization of InGaN alloys by spectroscopic ellipsometry
    Yusuke Tsukagoshi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, S. B. Che, Yoshihiro Ishitani, Akihiko Yoshikawa
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (5a-ZR-3)（Sapporo, Japan）
    September 5, 2007
  • (In Japanese) RF-MBE growth of InGaN on 4H-SiC (0001) and (000-1) substrates
    Misao Orihara, Go Shikata, Takeru Inoue, Yusuke Tsukagoshi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (6a-ZS-11)（Sapporo, Japan）
    September 6, 2007
  • (In Japanese) Characterization of SiO2/SiC interfaces using spectroscopic ellipsomter -Dependence on oxidation methos and surface orientation-
    Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (6p-ZN-2)（Sapporo, Japan）
    September 6, 2007
  • (In Japanese) Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In situ Spectroscopic Ellipsometer
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (6p-ZN-3)（Sapporo, Japan）
    September 6, 2007
  • (In Japanese) Model Calculation of SiC Oxidation Rate in the Thin Oxide Regime
    Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (6p-ZN-4)（Sapporo, Japan）
    September 6, 2007
  • (In Japanese) Polarization Properties of Twin Photoluminscence Peaks from Single Isoelectronic Traps in Nitrogen δ-doped GaAs
    Yuta Endo, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (7a-E-6)（Sapporo, Japan）
    September 7, 2007
  • (In Japanese) Photoluminescence from isoelectronic traps in nitrogen δ-doped GaP
    Masatoshi Ito, Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (7a-E-7)（Sapporo, Japan）
    September 7, 2007
  • (In Japanese) Study on the improvement of luminescence efficieny of GaInAsN alloys by photoirradiation
    Kentaro Tanioka, Yuta Endo, Masatoshi Ito, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Ryuji Katayama, Kentaro Onabe, Masahiro Yoshita, Hidefumi Akiyama
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (7p-E-2)（Sapporo, Japan）
    September 7, 2007
  • (In Japanese) Modulation spectroscopic investigation of lattice polaritu of GaN
    Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe
    The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics (8a-ZQ-8)（Sapporo, Japan）
    September 8, 2007
  • Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
    Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Fumihiro Nakajima, Ryuji Katayama and Kentaro Onabe
    13th International Conference on Modulated Semiconductor Structures (PM11) (Genova, Italy)
    July 17, 2007
  • Modulation spectroscopic investigation on lattice polarity of GaN
    Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe
    26th Electronic Materials Symposium (E9) (Moriyama, Japan)
    July 5, 2007
  • (In Japanese) Photoluminescence from single isoelectronic traps in nitrogen δ-doped GaAs窒素をデルタドープしたGaAs
    Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
    The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies (29p-Q-14) (Sagamihara, Japan)
    March 29, 2007
  • (In Japanese) RF-MBE growth of A-plane InN on R-plane sapphire with a GaN buffer layer
    Go Shikata, Shigeru Hirano, Fariz Abdulrashid, Hideki Hirayama, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies (30a-ZG-5) (Sagamihara, Japan)
    March 30, 2007
  • (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
    Shigeru Hirano, Go Shikata, Takeru Inoue, Yusuke Tsukagoshi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies (30p-ZG-2) (Sagamihara, Japan)
    March 30, 2007
  • (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on 4H-SiC substrates (III)
    Misao Orihara, Shigeru Hirano, Go Shikata, Takeru Inoue, Yusuke Tsukagoshi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies (30p-ZG-3) (Sagamihara, Japan)
    March 30, 2007