Presentation 1999

• (In Japanese) Spectroscopic ellipsometry study of optical constants of cubic GaN
  Hiroyuki Yaguchi, Takanobu Suzuki, Daisuke Ogawa, Hajime Okumura, Sadafumi Yoshida
  The 60th Autumn Meeting, 1999; The Japan Society of Applied Physics (3p-V-2) (Kobe, Japan)
  September 3, 1999
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
  Tokuharu Kimura, Seikoh Yoshida, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  1999 International Conference on Solid State Devices and Materials (C-1-5) (Tokyo, Japan)
  September 21, 1999
• Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy
  Hiroyuki Yaguchi, Jun Wu, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe and Yasuhiro Shiraki
  The Third International Conference on Nitride Semiconductors (Tu_P051) (Montpellier, France)
  July 6, 1999
• Suppression of the hexagonal phase in cubic GaN films by using misoriented GaAs (001) substrates
  Akira Nagayama, Ryuji Katayama, Nobuhiro Nakadan, Keijiro Miwa, Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe and Yasuhiro Shiraki
  The Third International Conference on Nitride Semiconductors (Mo_P040) (Montpellier, France)
  July 5, 1999
• Optical characterization of cubic AlGaN epilayers by cathodoluminescence and spectroscopic ellipsometry
  Hajime Okumura, T. Koizumi, Yuuki Ishida, Hiroyuki Yaguchi, Sadafumi Yoshida and Shigefusa Chichibu
  The Third International Conference on Nitride Semiconductors (Tu_P048) (Montpellier, France)
  July 6, 1999
• MOVPE growth and luminescence property of GaAsN alloys with higher nitrogen concentrations
  Kentaro Onabe, Daiichiro Aoki, Jun Wu, Hiroyuki Yaguchi and Yasuhiro Shiraki
  The Third International Conference on Nitride Semiconductors (Th_04) (Montpellier, France)
  July 8, 1999
• Selective growth of cubic GaN on patterned GaAs (100) substrates by metalorganic vapor phase epitaxy
  Jun Wu, Masahiro Kudo, Akira Nagayama, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  The Third International Conference on Nitride Semiconductors (Fr_05) (Montpellier, France)
  July 9, 1999
• Fabrication and Optical Properties of GaAs/AlGaAs Quantum Dot Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
  Tomoko Tsujikawa, Seiichiro Mori, Hiroshi Watanabe, Masahiro Yoshita, Hidefumi Akiyama, Rob van Dalen, Kentaro Onabe, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  The 9th International Conference on Modulated Semiconductor Structures (D19) (Fukuoka, Japan)
  July 12, 1999
• MOVPE Growth of Cubic GaN on Misoriented GaAs(100) Substrates: Growth Suppression of Hexagonal Phase Inclusion
  Akira Nagayama, Ryuji Katayama, Nobuhiro Nakadan, Keijiro Miwa, Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe and Yasuhiro Shiraki
  18th Electronic Materials Symposium (F7) (Kii-Shirahama, Japan)
  July 1, 1999
• Arsenic Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy: Surfactant and Incorporation Behavior
  Tokuharu Kimura, Seikoh Yoshida, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  18th Electronic Materials Symposium (F8) (Kii-Shirahama, Japan)
  July 1, 1999
• Growth of Cubic GaN on Patterned GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
  Masahiro Kudo, Jun Wu, Akira Nagayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  18th Electronic Materials Symposium (F9) (Kii-Shirahama, Japan)
  July 1, 1999
• High Phase-Purity Cubic GaN on GaAs(100) Grown by MOVPE
  Ryuji Katayama, Akira Nagayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  18th Electronic Materials Symposium (F10) (Kii-Shirahama, June)
  July 1, 1999
• MOVPE Growth and Luminescemnce Properties of GaAsN Alloys
  Daiichiro Aoki, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  18th Electronic Materials Symposium (F15) (Kii-Shirahama)
  July 1, 1999
• Metalorganic Vapor Phase Epitaxy of Cubic GaN and AlGaN on GaAs(100) Substrates and Their Optical Properties
  Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
  The Japan-China Bilateral Symposium on "Novel Methods for Preparation and Evolution of Coatings" (Tokyo, Japan)
  March, 1999
• (In Japanese) Temperature dependence of photoluminescence of GaAsN alloys
  Daiichiro Aoki, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (29a-P-6) (Noda, Japan)
  March 29, 1999
• (In Japanese) MOVPE growth of GaN and InGaN using dimethylhydrazine as N source
  Setiagung, Jun Wu, Kentaro Onabe, Yasuhiro Shiraki, Hiroyuki Yaguchi
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (28p-N-2) (Noda, Japan)
  March 28, 1999
• (In Japanese) Characterization of cubic AlGaN epilayers: cathodoluminescence and spectroscopic ellipsometry
  Hajime Okumura, Takayoshi Koizumi, Yuuki Ishida, Hiroyuki Yaguchi, Sadafumi Yoshida
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (29a-N-1) (Noda, Japan)
  March 29, 1999
• (In Japanese) Selective growth of cubic GaN by MOVOE on GaAs(100) substrate
  Masahiro Kudo, Akira Nagayama, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (30p-M-2) (Noda, Japan)
  Marh 30, 1999
• (In Japanese) MOVPE growth of cubic N rich GaNAs alloys
  Tokuharau Kimura, Seikoh Yoshida, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (30p-M-3) (Noda, Japan)
  March 30, 1999
• (In Japanese) Micro-photoluminescence spectroscopy of GaAs/AlGaAs TSR quantum dots
  Tomoko Tsujikawa, Seiichiro Mori, Hiroshi Watanabe, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito, Masahiro Yoshita, Hidefumi Akiyama, Rob van Dalen, Hiroyuki Yaguchi
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (30p-ZL-7) (Noda, Japan)
  March 30, 1999
• (In Japanese) Electronic Structures of III-V-Nitride Alloys
  Hiroyuki Yaguchi
  The 46th Spring Meeting 1999; The Japan Society of Applied Physics and Related Societies (29p-T-4) (Noda, Japan)
  March 29, 1999