Yaguchi

Presentation 1999


  • (In Japanese) 分光偏光解析による立方晶GaNの光学定数の評価
    矢口裕之, 鈴木隆信, 小川大輔, 奥村元, 吉田貞史
    第60回応用物理学会学術講演会(3pV2) (Kobe, Japan)
    September 3, 1999
  • Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
    T. Kimura, S. Yoshida, J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    1999 International Conference on Solid State Devices and Materials (C-1-5) (Tokyo, Japan)
    September 21, 1999
  • Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy
    H. Yaguchi, J. Wu, H. Akiyama, M. Baba, K. Onabe and Y. Shiraki
    The Third International Conference on Nitride Semiconductors (Montpellier, France)
    July, 1999
  • Suppression of the hexagonal phase in cubic GaN films by using misoriented GaAs (001) substrates
    A. Nagayama, R. Katayama, N. Nakadan, K. Miwa, H. Yaguchi, J. Wu, K. Onabe and Y. Shiraki
    The Third International Conference on Nitride Semiconductors (Montpellier, France)
    July, 1999
  • Optical characterization of cubic AlGaN epilayers by cathodoluminescence and spectroscopic ellipsometry
    H. Okumura, T. Koizumi, Y. Ishida, H. Yaguchi, S. Yoshida and S. Chichibu
    The Third International Conference on Nitride Semiconductors (Montpellier, France)
    July, 1999
  • MOVPE growth and luminescence property of GaAsN alloys with higher nitrogen concentrations
    K. Onabe, D. Aoki, J. Wu, H. Yaguchi and Y. Shiraki
    The Third International Conference on Nitride Semiconductors (Montpellier, France)
    July, 1999
  • Selective growth of cubic GaN on patterned GaAs (100) substrates by metalorganic vapor phase epitaxy
    J. Wu, M. Kudo, A. Nagayama, R. Katayama, H. Yaguchi, K. Onabe and Y. Shiraki
    The Third International Conference on Nitride Semiconductors (Montpellier, France)
    July, 1999
  • Fabrication and Optical Properties of GaAs/AlGaAs Quantum Dot Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
    T. Tsujikawa, S. Mori, H. Watanabe, M. Yoshita, H. Akiyama, R. van Dalen, K. Onabe, H. Yaguchi, Y. Shiraki and R. Ito
    The 9th International Conference on Modulated Semiconductor Structures (Fukuoka, Japan)
    July, 1999
  • MOVPE Growth of Cubic GaN on Misoriented GaAs(100) Substrates: Growth Suppression of Hexagonal Phase Inclusion
    A. Nagayama, R. Katayama, N. Nakadan, K. Miwa, H. Yaguchi, J. Wu, K. Onabe and Y. Shiraki
    18th Electronic Materials Symposium (F7) (Kii-Shirahama, Japan)
    July 1, 1999
  • Arsenic Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy: Surfactant and Incorporation Behavior
    T. Kimura, S. Yoshida, J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    18th Electronic Materials Symposium (F8) (Kii-Shirahama, Japan)
    July 1, 1999
  • Growth of Cubic GaN on Patterned GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
    M. Kudo, J. Wu, A. Nagayama, H. Yaguchi, K. Onabe and Y. Shiraki
    18th Electronic Materials Symposium (F9) (Kii-Shirahama, Japan)
    July 1, 1999
  • High Phase-Purity Cubic GaN on GaAs(100) Grown by MOVPE
    R. Katayama, A. Nagayama, H. Yaguchi, K. Onabe and Y. Shiraki
    18th Electronic Materials Symposium (F10) (Kii-Shirahama, June)
    July 1, 1999
  • MOVPE Growth and Luminescemnce Properties of GaAsN Alloys
    D. Aoki, J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    18th Electronic Materials Symposium (F15) (Kii-Shirahama)
    July 1, 1999
  • Metalorganic Vapor Phase Epitaxy of Cubic GaN and AlGaN on GaAs(100) Substrates and Their Optical Properties
    J. Wu, H. Yaguchi, K. Onabe and Y. Shiraki
    The Japan-China Bilateral Symposium on "Novel Methods for Preparation and Evolution of Coatings" (Tokyo, Japan)
    March, 1999
  • (In Japanese) GaAsN混晶の発光の温度依存性
    青木大一郎, 矢口裕之, 尾鍋研太郎, 白木靖寛
    第46回応用物理学関係連合講演会(29a-P-6) (Noda, Japan)
    March 29, 1999
  • (In Japanese) ジメチルヒドラジンを用いたGaNおよびInGaNのMOVPE 成長
    セティアグン, 呉軍, 尾鍋研太郎, 白木靖寛, 矢口裕之
    第46回応用物理学関係連合講演会(28p-N-2) (Noda, Japan)
    March 28, 1999
  • (In Japanese) 立方晶AlGaNエピ膜の光学特性：カソードルミネッセンス及び分光エリプソメトリー
    奥村元, 小泉貴義, 石田夕起, 矢口裕之, 吉田貞史
    第46回応用物理学関係連合講演会(29a-N-1) (Noda, Japan)
    March 29, 1999
  • (In Japanese) GaAs(100)基板上の立方晶GaNのMOVPE選択成長
    工藤真大, 長山昭, 呉軍, 矢口裕之, 尾鍋研太郎, 白木靖寛
    第46回応用物理学関係連合講演会(30p-M-2) (Noda, Japan)
    Marh 30, 1999
  • (In Japanese) Nリッチ立方晶GaNAs混晶のMOVPE成長
    木村徳治, 吉田清輝, 呉軍, 矢口裕之, 尾鍋研太郎, 白木靖寛
    第46回応用物理学関係連合講演会(30p-M-3) (Noda, Japan)
    March 30, 1999
  • (In Japanese) GaAs/AlGaAs TSR量子ドットの顕微フォトルミネッセンス測定
    辻川智子, 森誠一郎, 渡辺宙志, 尾鍋研太郎, 白木靖寛, 伊藤良一, 吉田正裕, 秋山英文, Rob van Dalen, 矢口裕之
    第46回応用物理学関係連合講演会(30p-ZL-7) (Noda, Japan)
    March 30, 1999
  • (In Japanese) III-V-N系窒化物混晶の電子構造
    矢口裕之
    第46回応用物理学関係連合講演会(29p-T-4) (Noda, Japan)
    March 29, 1999