Yaguchi

Presentation 2016


  • Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing Below Gap Excitation
    Keitaro Kondo, Norihiko Kamata, Hiroyuki Yaguchi, Shuhei Yagi, Takashi Fukuda and Zentaro Honda
    11th European Conference on Silicon Carbide and Related Materials (MoP.34) (Halkidiki, Greece)
    September 26, 2016
  • (In Japanese) Organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
    Yuuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Shuhei Yagi
    The 77th JSAP Autumn Meeting 2016 (13p-P9-11) (Niigata, Japan)
    September 13, 2016
  • (In Japanese) Effect of laser irradiation on the luminescence efficiency of GaInNAs alloy
    Seiichi Yonekura, Kengo Takamiya, Shuhei Yagi, Osamu Ueda, Hiroyuki Yaguchi
    The 77th JSAP Autumn Meeting 2016 (15p-P11-11) (Niigata, Japan)
    September 15, 2016
  • (In Japanese) Alignment control of self-assembled InN/GaN dot arrays grown on 4H-SiC(0001) vicinal substrates
    Keisuke Matsuoka, Shuhei Yagi, Hiroyuki Yaguchi
    The 77th JSAP Autumn Meeting 2016 (16a-P5-11) (Niigata, Japan)
    September 16, 2016
  • Nano-Structural Characterization of Cubic InN Dots Grown on Single-Domain Cubic GaN by Transmission Electron Microscopy
    Shuhei Yagi, Kenichi Ishii, Hiroyuki Yaguchi
    19th International Conference on Molecular Beam Epitaxy (Mo-P-73) (Montpellier, France)
    September 5, 2016
  • Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy
    Keisuke Matsuoka, Shuhei Yagi, Hiroyuki Yaguchi
    19th International Conference on Molecular Beam Epitaxy (Mo-P-61) (Montpellier, France)
    September 5, 2016
  • Effect of Low Temperature Growth and a Distributed Bragg Reflector on the emission from Molecular Beam Epitaxy‐Grown Er δ‐doped GaAs
    Kengo Takamiya, Masaki Suto, Keitai Iimura, Shuhei Yagi, Hiroyuki Yaguchi
    19th International Conference on Molecular Beam Epitaxy (Tu-P-2) (Montpellier, France)
    September 6, 2016
  • Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-
    Keitaro Kondo, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi, Takeshi Fukuda, and Zentaro Honda
    43rd International Symposium on Compound Semiconductors (MoP-ISCS-001) (Toyama, Japan)
    June 27, 2016
  • Optical Characterization of Carrier Recombination Processes in GaPN by Two- Wavelength Excited Photoluminescence
    Makiko Suetsugu, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi, Takeshi Fukuda, F. Karlsson, and Per-Olof Holtz
    43rd International Symposium on Compound Semiconductors (MoP-ISCS-084) (Toyama, Japan)
    June 27, 2016
  • Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates
    Kenichi Ishii, Shuhei Yagi, and Hiroyuki Yaguchi
    43rd International Symposium on Compound Semiconductors (MoP-ISCS-085) (Toyama, Japan)
    June 27, 2016
  • Optical Property of Acceptor-Donor-Acceptor Type Oligothiophenes
    Hiroaki Tachibana, Yuuki Akiyama, Tetsuhiko Miyadera, Hiroyuki Yaguchi, Reiko Azumi, Masayuki Chikamatsu
    26th IUPAC International Symposium on Photochemistry (1P06) (Osaka, Japan)
    April 4, 2016
  • (In Japanese) Real-time observation of growth process of P3HT film with an additive
    Koji Arai, Tetsuhiko Miyadera, Tomoyuki Koganezawa, Yuki Akiyama, Takeshi Sugita, Masayuki Chikamatsu, Shuhe Yagi, Hiroyuki Yaguchi
    The 63rd JSAP Spring Meeting 2016 (19p-W242-6) (Tokyo, Japan)
    March 19, 2016
  • (In Japanese) Optical Property of New types of Oligothiophene Compounds
    Hiroaki Tachibana, Yuuki Akiyama, Tetsuhiko Miyadera, Hiroyuki Yaguchi, Reiko Azumi, Masayuki Chikamatsu
    The 63rd JSAP Spring Meeting 2016 (19a-P3-2) (Tokyo, Japan)
    March 19, 2016
  • (In Japanese) Deposition amount dependence of cubic InN dot array structures grown on MgO (001) vicinal substrates
    Kenichi Ishii, Shuhei Yagi, Hiroyuki Yaguchi
    The 63rd JSAP Spring Meeting 2016 (22a-P6-10) (Tokyo, Japan)
    March 22, 2016
  • (In Japanese) Two Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-
    Keitaro Kondo, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
    The 63rd JSAP Spring Meeting 2016 (20a-H101-9) (Tokyo, Japan)
    March 20, 2016
  • (In Japanese) N極性(000-1)窒化物半導体混晶InGaNの結晶成長表面と発光素子応用
    Kanako Shojiki, Kengo Takamiya, Tomoyuki Tanikawa, Takashi Hanada, Ryohei Nonoda, Shigeyuki Kuboya, Hidefumi Akiyama, Hiroyuki Yaguchi, Ryuji Katayama, Takashi Matsuoka
    平成27年度日本表面科学会東北・北海道支部学術講演会 (I-03) (Sendai, Japan)
    March 9, 2016