Yaguchi

Presentation 2000


  • (In Japanese) 分光エリプソメーターによるSiC酸化膜の屈折率の評価
    Takeshi Iida, Yuichi Tomioka, Hiroyuki Tukada, Masahiko Midoriawa, Kazuo Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会　第9回講演会 (Nagoya, Japan)
    December, 2000
  • (In Japanese) 走査オージェ分光法によるSiO2/SiC界面の組成分析
    Yasuto Hijikata, Takeshi Iida, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会　第9回講演会 (Nagoya, Japan)
    December, 2000
  • (In Japanese) Siドープn型GaNにおける永続光伝導
    Tatsuhito Nakamura, Kazutoshi Kojima, Xu-Qiang Shen, Hajime Okumura, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会　第9回講演会 (Nagoya, Japan)
    December, 2000
  • (In Japanese) Growth of cubic GaN on 3C-SiC(001) by MBE using NH3 (II)
    Daisuke Ogawa, Hideyuki Watanabe, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (4a-Y-19) (Sapporo, Japan)
    September 4, 2000
  • (In Japanese) Photoluminescence study of cubic AlGaN alloys
    Takanobu Suzuki, Hiroyuki Yaguchi, Misao Orihara, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (4a-Y-20) (Sapporo, Japan)
    September 4, 2000
  • (In Japanese) Composition Analysis on the Interface Layer of SiO2/SiC by X-ray Photoelectron Spectroscopy
    Yasuto Hijikata, Takeshi Iida, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (4p-ZB-1) (Sapporo, Japan)
    September 4, 2000
  • (In Japanese) Characterization of SiC Oxide Films by Spectroscopic Ellipsometry (II)
    Takeshi Iida, Yuichi Tomioka, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (5a-ZB-6) (Sapporo, Japan)
    September 5, 2000
  • (In Japanese) Time-resolved photoluminescence study of GaAsN alloys
    Hiroyuki Yaguchi, Hidefumi Akiyama, Motoyoshi Baba, Daiichiro Aoki, Kentaro Onabe, Yasuto Hijikata, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (5p-ZA-9) (Sapporo, Japan)
    September 5, 2000
  • (In Japanese) Optical characterization of GaPN alloys using spectroscopic ellipsometry
    Shigeru Matsumoto, Hiroyuki Yaguchi, Seiro Miyoshi, Kentaro Onabe, Yasuto Hijikata, Sadafumi Yoshida
    The 61st Autumn Meeting, 2000; The Japan Society of Applied Physics (5p-ZA-12) (Sapporo, Japan)
    September 5, 2000
  • Dielectric Functions of GaAsN Alloys
    Hiroyuki Yaguchi, Shigeru Matsumoto, Shinichi Kashiwase, Takashi Hashimoto, Sadafumi Yoshida, Daiichiro Aoki and Kentaro Onabe
    19th Electronic Materials Symposium (H11) (Izu-Nagaoka, Japan)
    June 29, 2000
  • Optical characterization of metalorganic vapor phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry
    Shigeru Matsumoto, Shinichi Kashiwase, Takashi Hashimoto, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki and Kentaro Onabe
    The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (Tu-P30) (Sapporo, Japan)
    June 6, 2000
  • Optical Study of GaAsN Alloys Using Spectroscopic Ellipsometry
    Hiroyuki Yaguchi
    Research Institute for Electronic Science International Workshop (Sapporo, Japan)
    March 10, 2000
  • Optical Properties of GaAsN and GaPN Alloys Grown by Metalorganic Vapor Phase Epitaxy
    Hiroyuki Yaguchi
    The Third SANKEN International Symposium (P1-40) (Osaka, Japan)
    March 15, 2000
  • (In Japanese) Spectroscopic ellipsometry method of optical constant of GaAsN
    Shigeru Matsumoto, Shinichi Kashiwase, Takashi Hashimoto, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 47th Spring Meeting 2000; The Japan Society of Applied Physics and Related Societies (30a-P13-16) (Tokyo, Japan)
    March 30, 2000
  • (In Japanese) Temperature dependence of persistent photoconductivity in GaN
    Tatsuhito Nakamura, Takehiro Kaminaga, Hiroyuki Yaguchi, Sadafumi Yoshida, Hajime Okumura
    The 47th Spring Meeting 2000; The Japan Society of Applied Physics and Related Societies (30a-YQ-1) (Tokyo, Japan)
    March 30, 2000
  • (In Japanese) Characterization of SiC Oxide Films by Spectroscopic Ellipsometer
    Takeshi Iida, Yuichi Tomioka, Kentaro Matsunaka, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida
    The 47th Spring Meeting 2000; The Japan Society of Applied Physics and Related Societies (30p-YF-13) (Tokyo, Japan)
    March 30, 2000
  • (In Japanese) Groath of cubic GaN on 3C-SiC(001) by MBE using NH3
    Daisuke Ogawa, Yoshifumi Mitose, Hirohito Yamamoto, Takeshi Jitsusue, Misao Orihara, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 47th Spring Meeting 2000; The Japan Society of Applied Physics and Related Societies (31a-YN-9) (Tokyo, Japan)
    March 31, 2000
  • (In Japanese) Optical constants of cubic AlGaN alloys
    Takanobu Suzuki, Tsutomu Yokota, Hiroyuki Yaguchi, Misao Orihara, Sadafumi Yoshida, Hajime Okumura
    The 47th Spring Meeting 2000; The Japan Society of Applied Physics and Related Societies (31a-YN-10) (Tokyo, Japan)
    March 31, 2000