Presentation 2024

• Formation of thick germanium-on-nothing structures via inductively coupled plasma reactive ion etching
  Wenbo Fan, Ryuji Oshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
  35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (We2f-O43-03) (Numazu, Japan)
  November 13, 2024
• Enhanced reflectivity of InGaAs solar cells using patterned dielectric back contacts for thermophotovoltaic applications
  Masaki Date, Ryuji Oshima, Yasushi Shoji, Hitoshi Sai, Makoto Shimizu, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguch
  35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th2-P-43-08) (Numazu, Japan)
  November 14, 2024
• Naphthalenediimide electron transport materials as the self-assembled monolayers for perovskite solar cells
  Takashi Funaki, Masahiro Kashiwazaki, Kohei Yamamoto, Ryusei Emura, Hiroyuki Yaguchi, Takurou N. Murakami
  35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th1-P-51-19) (Numazu, Japan)
  November 14, 2024
• Demonstration of thermoradiative power conversion from InAsSb based mid-infrared light emitting diodes
  Muhammad Waleed Akram, Naoya Sagawa, Shuhei Yagi, Hiroyuki Yaguchi
  35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Tu4-P-52-40) (Numazu, Japan)
  November 12, 2024
• Below-gap photon induced photocurrent enhancement in GaPN intermediate band solar cell fabricated by ion implantation
  Md Mamun Or Rashid, Kyoko Munakata, Shuhei Yagi, Hiroyuki Yaguchi
  35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th1f-O52-04) (Numazu, Japan)
  November 14, 2024
• Effect of n-type AlGaN buffer layer's growth temperature on relaxation and conductivity in 228-230 nm Far-UVC LED grown on c-sapphire
  Muhammad Ajmal Khan, Mitsuhiro Muta, Kohei Fujimoto, Yukio Kashima, Sachie Fuikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
  2024 IEEE Photonics Conference (Tu C2.4) (Rome, Italy)
  November 12, 2024
• (In Japanase) Stability of Perovskite Solar Cells with Self-assembled Electron Transport Layer
  Ryusei Emura, Takashi Funaki, Kohei Yamamoto, N. Nishimura, Hiroyuki Yaguchi, Takurou N. Murakami
  2024 Japan Society of Colour Materials (1P10) (Tokyo, Japan)
  October 30, 2024
• Examining the Influence of Growth Temperature on n-AlGaN Buffer Layer and Quantum-Well of (228-230 nm)-Band far-UVC LEDs
  Muhammad Ajmal Khan, Mitsuhiro Muta, Hiroyuki Oogami, Kohei Fujimoto, Yuya Nagata, Yukio Kashima, Eriko Matsuura, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
  11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) (P1-021) (Busan, Korea)
  October 17, 2024
• Reduction of Forward Voltage in 230 nm AlGaN far-UVC LED Using Polarization Assisted AlGaN Hole Injection Layer
  Kohei Fujimoto, Mitsuhiro Muta, Muhammad Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
  11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) (WA3-6) (Busan, Korea)
  October 16, 2024
• Design of single metal plasmon waveguide GaN-based THz-QCL used AlN substrate
  Akira Kaneko, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
  The 43rd Electronic Materials Symposium (We2-2) (Kashihara, Japan)
  October 2, 2024
• (In Japanase) As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
  Yuki Shirakawa, Yohei Nukaga, Hiroyuki Yaguchi, and Sachie Fujikawa
  The 43rd Electronic Materials Symposium (Fr1-6) (Kashihara, Japan)
  Octover 4, 2024
• (In Japanase) Fabrication of PIN structure using InSb1-xNx thin films by magnetron sputtering
  Yuto Ariji, Hiroyuki Yaguchi, and Sachie Fujikawa
  The 43rd Electronic Materials Symposium (Fr1-25) (Kashihara, Japan)
  October 4, 2024
• (In Japanase) Analysis of doping density dependence of optical gain of 10 THz-band GaN-based QCL
  Airu Takahashi, Li Wang, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
  The 43rd Electronic Materials Symposium (Fr1-31) (Kashihara, Japan)
  October 4, 2024
• Methylammonium Tetrafluoroborate Additive for Spontaneous Heterointerface Modulation in FAPbI₃-Based Perovskite Solar Cells
  Daisuke Kubota, Ryuzi Katoh, Hiroyuki Kanda, Hiroyuki Yaguchi, Takurou N. Murakami, Naoyuki Nishimura
  41st European Photovotalic Solar Energy Conference and Exhibtion (2CV.3.68) (Vienna, Austria)
  September 25, 2024
• (In Japanase) Improvement of 230nm AlGaN far-UVC LED with polarization doping layer
  Kohei Fujimoto, Mitsuhiro Muta, Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
  The 85th JSAP Autumn Meeting 2024 (16p-A21-13) (Niigata, Japan)
  September 16, 2024
• Revisiting the Growth Temperature Dependence of n-AlGaN Buffer Layer and Quantum-Well in (228-230 nm)-Band far-UVC LEDs
  Muhammad Ajmal Khan, Mitsuhiro Muta, Kohei Fujimoto, Yuya Nagata, Yukio Kashima, Eriko Matsuura, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama1
  The 85th JSAP Autumn Meeting 2024 (16p-A21-14) (Niigata, Japan)
  September 16, 2024
• (In Japanase) Fabrication of patterned dielectric back contacts for InGaAs thermophotovoltaic cells
  Masaki Date, Ryuji Oshima, Yasushi Shoji, Hitoshi Sai, Makoto Shimizu, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
  The 85th JSAP Autumn Meeting 2024 (18p-B1-14) (Niigata, Japan)
  September 18, 2024
• (In Japanase) Anisotropic etching and annealing for germanium-on-nothing structure
  Wenbo Fan, Ryuji Oshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
  The 85th JSAP Autumn Meeting 2024 (18p-B1-20) (Niigata, Japan)
  September 18, 2024
• (In Japanase) Methylammonium tetrafluoroborate addition for improving heterointerfaces in FAPbI3 perovskite solar cells
  Daisuke Kubota, Ryuzi Katoh, Hiroyuki Kanda, Hiroyuki Yaguchi, Takurou Murakami, Naoyuki Nishimura
  The 85th JSAP Autumn Meeting 2024 (19p-C302-10) (Niigata, Japan)
  September 19, 2024
• Photocurrent enhancement in ion-implanted GaPN intermediateband solar cell
  Rashid Or MdMamun, Kyoko Munakata, Shuhei Yagi, Hiroyuki Yaguchi
  The 85th JSAP Autumn Meeting 2024 (19p-P07-6) (Niigata, Japan)
  September 19, 2024
• (In Japanase) Photoluminescence characterization of GaPN alloys grown with Sb surfactant
  Kazuya Yagi, Hibiki Saida, Shuhei Yagi, Hiroyuki Yaguchi, Yamato Kyuno, Keisuke Yamane
  The 85th JSAP Autumn Meeting 2024 (19p-P09-5) (Niigata, Japan)
  September 19, 2024
• (In Japanase) Growth and electrical characterization of Be-doped InSb thin films by MBE method
  Riku Hoshino, Yuya Urushido, Hiroyuki Yaguchi, Sachie Fujikawa
  The 85th JSAP Autumn Meeting 2024 (19p-P09-6) (Niigata, Japan)
  September 19, 2024
• (In Japanase) As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
  Yuki Shirakawa, Yohei Nukaga, Hiroyuki Yaguchi, Sachie Fujikawa
  The 85th JSAP Autumn Meeting 2024 (19p-P09-7) (Niigata, Japan)
  September 19, 2024
• (In Japanase) Growth of Sn doped and Zn modulation doped InSb_1-xN_x thin films by sputtering
  Sachie Fujikawa, Yuto Ariji, Hiroyuki Yaguchi
  The 85th JSAP Autumn Meeting 2024 (19p-P09-8) (Niigata, Japan)
  September 19, 2024
• (In Japanase) Fabrication of PIN structure using InSb_1-xN_x thin films by magnetron sputtering method
  Yuto Ariji, Hiroyuki Yaguchi, Sachie Fujikawa
  The 85th JSAP Autumn Meeting 2024 (19p-P09-9) (Niigata, Japan)
  September 19, 2024
• (In Japanase) Design of single metal plasmon waveguide GaN-based THz-QCL used AlN substrate
  Akira Kaneko, Sachie Fujikawa, Hiroyuki Yaguchi, Hideki Hirayama
  The 85th JSAP Autumn Meeting 2024 (20a-A34-1) (Niigata, Japan)
  September 20, 2024
• (In Japanase) Doping concentration dependence of optical gain of 10 THz-band GaN-based QCL
  Airu Takahashi, Li Wang, Sachie Fujikawa, Hiroyuki Yaguchi, Hideki Hirayama
  The 85th JSAP Autumn Meeting 2024 (20a-A34-2) (Niigata, Japan)
  September 20, 2024
• (In Japanase) Room temperature PL spectra from InN/GaN quantum dots grown by RF-MBE
  Kazuma Kojima, Shuhei Yagi, Hiroyuki Yaguchi
  The 85th JSAP Autumn Meeting 2024 (20a-P02-2) (Niigata, Japan)
  September 20, 2024
• Achievement of 0.01% EQE in 222 nm AlGaN Far-UVC LED using Al-Graded AlGaN Polarization Doping layer
  Ranga Raju Harshitha, Yuki Nakamura, Sachie Fujikawa, M. Ajmal Khan, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
  The 7th International Workshop on UV Materials and Devices (TA25) (Taipei, Taiwan)
  June 4, 2024
• Riken Progress of 0.32% EQE in 228 nm Far-UVC LED and 10% EQE in UVB LED grown on c-Sapphire
  M. Ajmal Khan, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
  The 7th International Workshop on UV Materials and Devices (TA23) (Taipei, Taiwan)
  June 2, 2024
• Increasing the Efficiency of 219-222 nm AlGaN Far-UVC LEDs with Graded Al Content AlGaN Polarization Doping Layers
  Hideki Hirayama, Harshitha Rangaraju, Yuki Nakamura, Sachie Fujikawa, M.Ajmal Khan, Hiroyuki Yaguchi and Yasushi Iwaisako
  The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.3) (Las Vegas, USA)
  May 16, 2024
• 225 nm Band AlGaN Far-UVC LED on c-Sapphire with EQE of 0.022%
  M. Ajmal Khan, Taiga Kirihara, Mitsuhiro Muta, Oogami Hiroyuki, Kouhei Fujimoto, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
  The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.4) (Las Vegas, USA)
  May 16, 2024
• Thermal Investigation of AlGaN UVB LED on c-Sapphire having External-Quantum Efficiency of 10%
  M. Ajmal Khan, Javier Gonzalez Rojas, Pablo Fredes, Ernesto Gramsch, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
  The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.5) (Las Vegas, USA)
  May 16, 2024
• (In Japanese) Reduction of series resistance by improving front contact grid for InGaAs thermophotovoltaice cells
  Masaki Date, Ryuji Ohshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
  The 71st JSAP Spring Meeting 2024 (24p-P06-2) (Tokyo, Japan)
  March 24, 2024
• (In Japanese) Anisotropic etching by ICP-RIE for Ge substrate reuse technology
  Wenbo Fan, Ryuji Ohshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
  The 71st JSAP Spring Meeting 2024 (24p-P06-3) (Tokyo, Japan)
  March 24, 2024
• Analysis of Two Step Photocurrent Generation in GaAsN-Based Intermediate Band Solar Cells Based on Device Simulation
  Md Faruk Hossain, Shuhei Yagi, Hiroyuki Yaguch
  The 71st JSAP Spring Meeting 2024 (24p-P06-15) (Tokyo, Japan)
  March 24, 2024
• Two-wavelength excited photoluminescence study of GaAsN/GaAs heterostructures
  Abdou Karim Niang, Naofumi Uchiyama, Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi
  The 71st JSAP Spring Meeting 2024 (25a-P02-4) (Tokyo, Japan)
  March 25, 2024
• Increasing the efficiency of 222 nm AlGaN far-UVC LED with polarization-doping layer
  Harshitha Rangaraju, Yuki Namakura, Kou Sumishi, Ajmal Ajmal, Sachie Fujikawa, Hiroyuki Yaguchi, Akira Endoh, Hiroyuki Fujishiro, Yasushi Iwaisako, Hideki Hirayama
  The 71st JSAP Spring Meeting 2024 (24p-61C-12) (Tokyo, Japan)
  March 24, 2024
• (In Japanese) Development of Self-Assembled Monolayer Materials for the Perovskite Solar Cells
  Masahiro Kashiwazaki, Takuma Chigira, Takashi Funaki, Atsushi Kogo, Kohei Yamamoto, Naoyuki Nishimura, Hiroyuki Yaguchi, and Takurou N. Murakami
  The 91st ECSJ Annual Meeting (S3 3 01) (Nagoya, Japan)
  March 16, 2024