Presentation 2024


  • Reduction of Forward Voltage in 230 nm AlGaN far-UVC LED Using Polarization Assisted AlGaN Hole Injection Layer
    Kohei Fujimoto, Mitsuhiro Muta, Muhammad Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
    11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) (WA3-6) (Busan, Korea)
    October 16, 2024
  • Design of single metal plasmon waveguide GaN-based THz-QCL used AlN substrate
    Akira Kaneko, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
    The 43rd Electronic Materials Symposium (We2-2) (Kashihara, Japan)
    October 2, 2024
  • As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
    Y. Shirakawa, Y. Nukaga, Hiroyuki Yaguchi, and Sachie Fujikawa
    The 43rd Electronic Materials Symposium (Fr1-6) (Kashihara, Japan)
    Octover 4, 2024
  • Fabrication of PIN structure using InSb1-xNx thin films by magnetron sputtering
    Yuto Ariji, Hiroyuki Yaguchi, and Sachie Fujikawa
    The 43rd Electronic Materials Symposium (Fr1-25) (Kashihara, Japan)
    October 4, 2024
  • Analysis of doping density dependence of optical gain of 10 THz-band GaN-based QCL
    Airu Takahashi, L. Wang, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
    The 43rd Electronic Materials Symposium (Fr1-31) (Kashihara, Japan)
    October 4, 2024
  • Methylammonium Tetrafluoroborate Additive for Spontaneous Heterointerface Modulation in FAPbI3-Based Perovskite Solar Cells
    Daisuke Kubota, Ryuzi Katoh, Hiroyuki Kanda, Hiroyuki Yaguchi, Takurou N. Murakami, Naoyuki Nishimura
    41st European Photovotalic Solar Energy Conference and Exhibtion (2CV.3.68) (Vienna, Austria)
    September 25, 2024
  • (In Japanase) Improvement of 230nm AlGaN far-UVC LED with polarization doping layer
    Kohei Fujimoto, Mitsuhiro Muta, Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
    The 85th JSAP Autumn Meeting 2024 (16p-A21-13) (Niigata, Japan)
    September 16, 2024
  • Revisiting the Growth Temperature Dependence of n-AlGaN Buffer Layer and Quantum-Well in (228-230 nm)-Band far-UVC LEDs
    Muhammad Ajmal Khan, Mitsuhiro Muta, Kohei Fujimoto, Yuya Nagata, Yukio Kashima, Eriko Matsuura, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama1
    The 85th JSAP Autumn Meeting 2024 (16p-A21-14) (Niigata, Japan)
    September 16, 2024
  • (In Japanase) Fabrication of patterned dielectric back contacts for InGaAs thermophotovoltaic cells
    Masaki Date, Ryuji Oshima, Yasushi Shoji, Hitoshi Sai, Makoto Shimizu, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
    The 85th JSAP Autumn Meeting 2024 (18p-B1-14) (Niigata, Japan)
    September 18, 2024
  • (In Japanase) Anisotropic etching and annealing for germanium-on-nothing structure
    Wenbo Fan, Ryuji Oshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
    The 85th JSAP Autumn Meeting 2024 (18p-B1-20) (Niigata, Japan)
    September 18, 2024
  • (In Japanase) Methylammonium tetrafluoroborate addition for improving heterointerfaces in FAPbI3 perovskite solar cells
    Daisuke Kubota, Ryuzi Katoh, Hiroyuki Kanda, Hiroyuki Yaguchi, Takurou Murakami, Naoyuki Nishimura
    The 85th JSAP Autumn Meeting 2024 (19p-C302-10) (Niigata, Japan)
    September 19, 2024
  • Photocurrent enhancement in ion-implanted GaPN intermediateband solar cell
    Rashid Or MdMamun, Kyoko Munakata, Shuhei Yagi, Hiroyuki Yaguchi
    The 85th JSAP Autumn Meeting 2024 (19p-P07-6) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) Photoluminescence characterization of GaPN alloys grown with Sb surfactant
    Kazuya Yagi, Hibiki Saida, Shuhei Yagi, Hiroyuki Yaguchi, Yamato Kyuno, Keisuke Yamane
    The 85th JSAP Autumn Meeting 2024 (19p-P09-5) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) Growth and electrical characterization of Be-doped InSb thin films by MBE method
    Riku Hoshino, Yuya Urushido, Hiroyuki Yaguchi, Sachie Fujikawa
    The 85th JSAP Autumn Meeting 2024 (19p-P09-6) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
    Yuki Shirakawa, Yohei Nukaga, Hiroyuki Yaguchi, Sachie Fujikawa
    The 85th JSAP Autumn Meeting 2024 (19p-P09-7) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) Growth of Sn doped and Zn modulation doped InSb1-xNx thin films by sputtering
    Sachie Fujikawa, Yuto Ariji, Hiroyuki Yaguchi
    The 85th JSAP Autumn Meeting 2024 (19p-P09-8) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) Fabrication of PIN structure using InSb1-xNx thin films by magnetron sputtering method
    Yuto Ariji, Hiroyuki Yaguchi, Sachie Fujikawa
    The 85th JSAP Autumn Meeting 2024 (19p-P09-9) (Niigata, Japan)
    September 19, 2024
  • (In Japanase) Design of single metal plasmon waveguide GaN-based THz-QCL used AlN substrate
    Akira Kaneko, Sachie Fujikawa, Hiroyuki Yaguchi, Hideki Hirayama
    The 85th JSAP Autumn Meeting 2024 (20a-A34-1) (Niigata, Japan)
    September 20, 2024
  • (In Japanase) Doping concentration dependence of optical gain of 10 THz-band GaN-based QCL
    Airu Takahashi, Li Wang, Sachie Fujikawa, Hiroyuki Yaguchi, Hideki Hirayama
    The 85th JSAP Autumn Meeting 2024 (20a-A34-2) (Niigata, Japan)
    September 20, 2024
  • (In Japanase) Room temperature PL spectra from InN/GaN quantum dots grown by RF-MBE
    Kazuma Kojima, Shuhei Yagi, Hiroyuki Yaguchi
    The 85th JSAP Autumn Meeting 2024 (20a-P02-2) (Niigata, Japan)
    September 20, 2024
  • Achievement of 0.01% EQE in 222 nm AlGaN Far-UVC LED using Al-Graded AlGaN Polarization Doping layer
    Ranga Raju Harshitha, Yuki Nakamura, Sachie Fujikawa, M. Ajmal Khan, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
    The 7th International Workshop on UV Materials and Devices (TA25) (Taipei, Taiwan)
    June 4, 2024
  • Riken Progress of 0.32% EQE in 228 nm Far-UVC LED and 10% EQE in UVB LED grown on c-Sapphire
    M. Ajmal Khan, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
    The 7th International Workshop on UV Materials and Devices (TA23) (Taipei, Taiwan)
    June 2, 2024
  • Increasing the Efficiency of 219-222 nm AlGaN Far-UVC LEDs with Graded Al Content AlGaN Polarization Doping Layers
    Hideki Hirayama, Harshitha Rangaraju, Yuki Nakamura, Sachie Fujikawa, M.Ajmal Khan, Hiroyuki Yaguchi and Yasushi Iwaisako
    The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.3) (Las Vegas, USA)
    May 16, 2024
  • 225 nm Band AlGaN Far-UVC LED on c-Sapphire with EQE of 0.022%
    M. Ajmal Khan, Taiga Kirihara, Mitsuhiro Muta, Oogami Hiroyuki, Kouhei Fujimoto, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
    The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.4) (Las Vegas, USA)
    May 16, 2024
  • Thermal Investigation of AlGaN UVB LED on c-Sapphire having External-Quantum Efficiency of 10%
    M. Ajmal Khan, Javier Gonzalez Rojas, Pablo Fredes, Ernesto Gramsch, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
    The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.5) (Las Vegas, USA)
    May 16, 2024
  • (In Japanese) Reduction of series resistance by improving front contact grid for InGaAs thermophotovoltaice cells
    Masaki Date, Ryuji Ohshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
    The 71st JSAP Spring Meeting 2024 (24p-P06-2) (Tokyo, Japan)
    March 24, 2024
  • (In Japanese) Anisotropic etching by ICP-RIE for Ge substrate reuse technology
    Wenbo Fan, Ryuji Ohshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
    The 71st JSAP Spring Meeting 2024 (24p-P06-3) (Tokyo, Japan)
    March 24, 2024
  • Analysis of Two Step Photocurrent Generation in GaAsN-Based Intermediate Band Solar Cells Based on Device Simulation
    Md Faruk Hossain, Shuhei Yagi, Hiroyuki Yaguch
    The 71st JSAP Spring Meeting 2024 (24p-P06-15) (Tokyo, Japan)
    March 24, 2024
  • Two-wavelength excited photoluminescence study of GaAsN/GaAs heterostructures
    Abdou Karim Niang, Naofumi Uchiyama, Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi
    The 71st JSAP Spring Meeting 2024 (25a-P02-4) (Tokyo, Japan)
    March 25, 2024
  • Increasing the efficiency of 222 nm AlGaN far-UVC LED with polarization-doping layer
    Harshitha Rangaraju, Yuki Namakura, Kou Sumishi, Ajmal Ajmal, Sachie Fujikawa, Hiroyuki Yaguchi, Akira Endoh, Hiroyuki Fujishiro, Yasushi Iwaisako, Hideki Hirayama
    The 71st JSAP Spring Meeting 2024 (24p-61C-12) (Tokyo, Japan)
    March 24, 2024
  • (In Japanese) Development of Self-Assembled Monolayer Materials for the Perovskite Solar Cells
    Masahiro Kashiwazaki, Takuma Chigira, Takashi Funaki, Atsushi Kogo, Kohei Yamamoto, Naoyuki Nishimura, Hiroyuki Yaguchi, and Takurou N. Murakami
    The 91st ECSJ Annual Meeting (S3 3 01) (Nagoya, Japan)
    March 16, 2024