Yaguchi

Presentation 2006


  • (In Japanese) テラヘルツ分光法によるSiC エピタキシャル成長膜のキャリヤ濃度, 移動度, 膜厚の同時評価
    Shingo Oishi, Yasuto Hijikata, Hiroyuki Yagcuhi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第15回講演会 (P-20) (Takasaki, Japan)
    November 9, 2006
  • (In Japanese) 窒素イオン注入によりアモルファス化された4H-SiCを用いたMOSキャパシタの作製
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti
    SiC及び関連ワイドギャップ半導体研究会 第15回講演会 (P-32) (Takasaki, Japan)
    November 9, 2006
  • (In Japanese) In-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Safafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第15回講演会 (P-28) (Takasaki, Japan)
    November 9, 2006
  • (In Japanese) 分光エリプソメータによるSiO2/SiC界面の光学的評価 — 酸化法, 面方位依存性 —
    Hideki Hashimoto, Ryoichi Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第15回講演会 (P-27) (Takasaki, Japan)
    November 9, 2006
  • (In Japanese) 分光エリプソメータによるSiO2/SiC界面の光学的評価 — 複数の入射角による測定 —
    Ryoichi Kuboki, Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    SiC及び関連ワイドギャップ半導体研究会 第15回講演会 (P-26) (Takasaki, Japan)
    November 9, 2006
  • (In Japanese) GaN, InN結晶特性からみた立方晶, 六方晶の違いに関する考察
    Hiroyuki Yaguchi
    第31回結晶成長討論会 (Otsu, Japan)
    November 5, 2006
  • Photoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys
    Hiroyuki Yaguchi, Takashi Aoki, Toshikazu Morioke, Yasuto Hijikata, Sadafumo Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Daiichiro Aoki, and Kentaro Onabe
    International Workshop on Nitride Semiconductors 2006 (IWN2006) (MoP2-71) (Kyoto, Japan)
    October 23, 2006
  • Structural and Optical Characterization of High In Content Cubic InGaN on GaAs(001) Substrates by RF-MBE
    Teruyki Nakamura, Yutao Endo, Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe
    International Workshop on Nitride Semiconductors 2006 (IWN2006) (TuP1-61) (Kyoto, Japan)
    October 24, 2006
  • Micro-photoluminescence study on nitrogen atomic-layer doping in GaAs
    Hiroyuki Yaguchi
    Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, p. 51 (Bonassola, Italy)
    September 20, 2006
  • RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
    Shigeru Hirano, Takeru Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    International Conference on Molecular Beam Epitaxy 2006 (TuP-23) (Tokyo, Japan)
    September 5, 2006
  • RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
    Go Shikata, Shigeru Hirano, Takeru Inoue, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
    International Conference on Molecular Beam Epitaxy 2006 (TuP-24) (Tokyo, Japan)
    September 5, 2006
  • Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
    Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    European Conference on SiC and Related Materials (ECSCRM) (MoP79) (Newcastle, UK)
    September 4, 2006
  • (In Japanese) Characterization of In-rich InGaN by spectroscopic ellipsometry
    Yusuke Tsukagoshi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, S.-B. Che, Yoshihiro Ishitani, Akihiko Yoshikawa
    The 67th Autumn Meeting; The Japan Society of Applied Physics (29p-C-11)（Kusatsu, Japan）
    August 29, 2006
  • (In Japanese) Photoluminescence study of cubic InN grown by RF-MBE
    Takeru Inoue, Shigeru Hirano, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 67th Autumn Meeting; The Japan Society of Applied Physics (29a-C-10)（Kusatsu, Japan）
    August 29, 2006
  • (In Japanese) Micro photoluminescence study of isoelectronic traps in nitrogen δ-doped GaAs
    Yuta Endo, Kentaro Tanioka, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe
    The 67th Autumn Meeting; The Japan Society of Applied Physics (29p-B-11) (Kusatsu, Japan）
    August 29, 2006
  • (In Japanese) Characterization of electrical properties of SiC epi-layer using infrared reflectance spectroscopy
    Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 67th Autumn Meeting; The Japan Society of Applied Physics (30p-ZG-1) (Kusatsu, Japan）
    August 30, 2006
  • (In Japanese) Characterization of SiO2/SiC interfaces using spectroscopic ellipsometer -Dependence on oxidation methods and surface orientation
    Hideki Hashimoto, Ryoichi Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 67th Autumn Meeting; The Japan Society of Applied Physics (31a-ZG-8)（Kusatsu, Japan）
    August 31, 2006
  • (In Japanese) Fabrication of MOS Capacitors using 4H-SiC Preamorphized by Nitrogen Ion Implantation
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti
    The 67th Autumn Meeting; The Japan Society of Applied Physics (31a-ZG-6)（Kusatsu, Japan）
    August 31, 2006
  • Micro-photoluminescence study of nitrogen atomic-layer doped GaAs
    Yuta Endo, Kentaro Tanioka, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Wataru Ono, Fumihiro Nakajima, Ryuji Katayama, and Kentaro Onabe
    25th Electronic Materials Symposium (I4) (Izu-no-kuni, Japan)
    July 6, 2006
  • Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys
    Kentaro Tanioka, Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, and Kentaro Onabe
    13th International Conference on Metalorganic Vapor Phase Epitaxy (Tu-P.53) (Miyazaki, Japan)
    May 23, 2006
  • Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
    Yuta Endo, Kentaro Tanioka, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, Wataru Ono, Fumihiro Nakajima, Ryuji Katayama, and Kentaro Onabe
    13th International Conference on Metalorganic Vapor Phase Epitaxy (Tu-P.96) (Miyazaki, Japan)
    May 23, 2006
  • Real-time observation of SiC oxidation using an in situ spectroscopic ellipsometer
    Sadafumi Yoshida, Koichi Kakubari, Yasuto Hijikata, Hiroyuki Yaguchi, and Masahito Yoshikawa
    2006 Japanese-Spanish-German Joint Workshop on Advanced Semiconductor Optoelectronic Materials and Devices (Berlin, Germany)
    March, 2006
  • (In Japanese) RF-MBE growth of hexagonal InN on 3C-SiC(001) substrates
    Takeru Inoue, Yohei Iwahashi, Shigeru Hirano, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 53rd Spring Meeting; The Japan Society of Applied Physics and Related Societies (22p-ZF-7) (Tokyo, Japan)
    March 22, 2006
  • (In Japanese) RF-MBE growth of InN/InGaN quantum well structures on SiC substrates
    Misao Orihara, Yohei Iwahashi, Shigeru Hirano, Takeru Inoue, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 53rd Spring Meeting; The Japan Society of Applied Physics and Related Societies (22p-ZF-8) (Tokyo, Japan)
    March 22, 2006
  • (In Japanese) Real time observation of SiC oxidation using in-situ spectroscopic ellipsometer
    Koichi Kakubari, Ryoichi Kuboki, Takeshi Yamanoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 53rd Spring Meeting; The Japan Society of Applied Physics and Related Societies (24a-ZP-9) (Tokyo, Japan)
    March 24, 2006
  • (In Japanese) Study on the improvement of luminescence efficiency of GaAsN alloys using Raman spectroscopy
    Kentaro Tanioka, Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Daiichiro Aoki, Kentaro Onabe
    The 53rd Spring Meeting; The Japan Society of Applied Physics and Related Societies (24a-P-7) (Tokyo, Japan)
    March 24, 2006
  • (In Japanese) RF-MBE growth of cubic InN (IV))
    Yohei Iwahashi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
    The 53rd Spring Meeting; The Japan Society of Applied Physics and Related Societies (26p-ZE-2) (Tokyo, Japan)
    March 26, 2006