Publication 1996
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The optical processes in AlInP/GaInP/AlInP quantum wells
Y. Ishitani, S. Minagawa, T. Kita, T. Nishino, H. Yaguchi and Y. Shiraki
Journal of Applied Physics Vol. 80, No. 8, pp. 4592-4598 (1996).
DOI: 10.1063/1.363829
Erratum: Journal of Applied Physics Vol. 82, No. 11, p. 5876 (1997).
DOI: 10.1063/1.366457
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Anomalous optical absorption in ZnCdSe/ZnSe single quantum wells
B. Zhang, T. Yasui, T. Yasuda, Y. Segawa, H. Yaguchi and Y. Shiraki
Solid State Communications Vol. 99, No. 12, pp. 897-900 (1996).
DOI: 10.1016/0038-1098(96)00320-1
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Characterization of Modulation-Doped n-AlxGa1-xAs/GaAs
Heterostructure Using Spectroscopic Ellipsometry and Photoreflectance
C. C. Wong, M. Mochizuki, H. Yaguchi, T. Saitoh and Y.-M. Xiong
SPIE, Vol. 2873, pp. 226-229 (1996).
DOI: 10.1117/12.246226
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Characterization of Si delta-doped GaAs using photoellipsometry and photoreflectance
M. Mochizuki, K. Kobayashi, H. Yaguchi, T. Saitoh and Y.-M. Xiong
SPIE, Vol. 2873, pp. 270-273 (1996).
DOI: 10.1117/12.246238
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Built-in Electric Field Strength in InP/n+-InP Determined by
Photoellipsometry and Photoreflectance
Y.-M. Xiong, T. Saitoh, H. Yaguchi, Y. Shiraki
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, pp. 724-726 (1996).
DOI: 10.7567/SSDM.1996.PD-7-3
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Time-resolved photoluminescence study on AlxGa1-xAs
spontaneous vertical quantum well structures
N. Usami, W. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki
Appled Physics Letters Vol. 68, No. 23, pp. 3221-3223 (1996).
DOI: 10.1063/1.116443
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Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum
Wells
W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Vol. 35, No. 2B, pp. 1214-1216 (1996).
DOI: 10.1143/JJAP.35.1214
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Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire
structures grown on V-grooved GaAs substrates
W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
Institute of Physics Conference Seriers Vol. 145, pp. 925-930 (1996).
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Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP
quantum wells
A. Shima, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
Institute of Physics Conference Series Vol. 145, pp. 403-408 (1996).
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Growth temperature dependence of AlGaAs spontaneous vertical quantum wells
on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy
W. Pan, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
Journal of Crystal Growth Vol. 158, No. 3, pp. 205-209 (1996).
DOI: 10.1016/0022-0248(95)00449-1
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Time-resolved photoluminescence study of radiative transition processes
in GaP1-xNx alloys
H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe,
Y. Shiraki and R. Ito
Institute of Physics Conference Series Vol. 145, pp. 307-312 (1996).