Yaguchi

Publication 1996


  • The optical processes in AlInP/GaInP/AlInP quantum wells
    Y. Ishitani, S. Minagawa, T. Kita, T. Nishino, H. Yaguchi and Y. Shiraki
    Journal of Applied Physics Vol. 80, No. 8, pp. 4592-4598 (1996).
    DOI: 10.1063/1.363829
    Erratum: Journal of Applied Physics Vol. 82, No. 11, p. 5876 (1997).
    DOI: 10.1063/1.366457
  • Anomalous optical absorption in ZnCdSe/ZnSe single quantum wells
    B. Zhang, T. Yasui, T. Yasuda, Y. Segawa, H. Yaguchi and Y. Shiraki
    Solid State Communications Vol. 99, No. 12, pp. 897-900 (1996).
    DOI: 10.1016/0038-1098(96)00320-1
  • Characterization of Modulation-Doped n-AlxGa1-xAs/GaAs Heterostructure Using Spectroscopic Ellipsometry and Photoreflectance
    C. C. Wong, M. Mochizuki, H. Yaguchi, T. Saitoh and Y.-M. Xiong
    SPIE, Vol. 2873, pp. 226-229 (1996).
    DOI: 10.1117/12.246226
  • Characterization of Si delta-doped GaAs using photoellipsometry and photoreflectance
    M. Mochizuki, K. Kobayashi, H. Yaguchi, T. Saitoh and Y.-M. Xiong
    SPIE, Vol. 2873, pp. 270-273 (1996).
    DOI: 10.1117/12.246238
  • Built-in Electric Field Strength in InP/n+-InP Determined by Photoellipsometry and Photoreflectance
    Y.-M. Xiong, T. Saitoh, H. Yaguchi, Y. Shiraki
    Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, pp. 724-726 (1996).
    DOI: 10.7567/SSDM.1996.PD-7-3
  • Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures
    N. Usami, W. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki
    Appled Physics Letters Vol. 68, No. 23, pp. 3221-3223 (1996).
    DOI: 10.1063/1.116443
  • Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
    Japanese Journal of Applied Physics Vol. 35, No. 2B, pp. 1214-1216 (1996).
    DOI: 10.1143/JJAP.35.1214
  • Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates
    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki
    Institute of Physics Conference Seriers Vol. 145, pp. 925-930 (1996).
  • Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP quantum wells
    A. Shima, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Institute of Physics Conference Series Vol. 145, pp. 403-408 (1996).
  • Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy
    W. Pan, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito
    Journal of Crystal Growth Vol. 158, No. 3, pp. 205-209 (1996).
    DOI: 10.1016/0022-0248(95)00449-1
  • Time-resolved photoluminescence study of radiative transition processes in GaP1-xNx alloys
    H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki and R. Ito
    Institute of Physics Conference Series Vol. 145, pp. 307-312 (1996).