Yaguchi

Presentation 2019


  • Crystal Growth Dynamics of CH3NH3PbI3 in Vacuum Deposition Process
    Tetsuhiko Miyadera, Yuto Auchi, Kohei Yamanoto, Noboru Ohashi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
    Materials Research Meeting 2019 (G3-13-P16) (Yokohama, Japan)
    December 13, 2019
  • (In Japanese) DCスパッタAlNテンプレートを用いたUVC-LEDの進展
    Yosuke Mogami, Atsushi Osawa, Kazuo Osaki, Yukitake Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    IEICE Electonics Society Laser and Quantum Electronics (LQE2019-96) (Hamamatsu, Japan)
    November 22, 2019
  • Fabrication of UVC AlGaN LEDs on DC-sputtered AlN templates with hightemperature annealing
    Yosuke Mogami, Atsushi Osawa, Kazuo Osaki, Yukitake Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, and Hideki Hirayama
    The 9th Asia-Pacific Workshop on Widegap Semiconductors (MoP-OD-13) (Onna-son, Okinawa, Japan)
    November 11, 2019
  • (In Japanese) Crystal orientation control of organolead halide pervskite by vacuum process
    Tetsuhiko Miyadera, Yuto Auchi, Kohei Yamamoto, Noboru Ohashi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
    2019 68th Symposium on Macromolecules (2U13) (Fukui, Japan)
    September 26, 2019
  • Photoluminescence Intensity Change of GaPN by Laser Irradiation
    Sultan Md. Zamil, A. Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi
    7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P-12) (Kobe, Japan)
    September 25, 2019
  • Upconversion Luminescence from GaPN Alloys with Various N Compositions
    Kengo Takamiya, Wataru Takahashi, Shuhei Yagi, Norihiko Kamata, Y. Hazama, Hidefumi Akiyama, and Hiroyuki Yaguchi
    7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P-24) (Kobe, Japan)
    September 25, 2019
  • Fabrication of Cubic InN Nanowires on GaN V-Groove Structures
    Yusuke Nishimura, Shuhei Yagi, and Hiroyuki Yaguchi
    7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P-25) (Kobe, Japan)
    September 25, 2019
  • Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
    Rikiya Onuma, Shuhei Yagi, and Hiroyuki Yaguchi
    7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P-26) (Kobe, Japan)
    September 25, 2019
  • Laser Induced Degradation of Photoluminescence Intensity in GaPN
    Md Zamil Sultan, A. Shiroma, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi
    The 80th JSAP Autumn Meeting 2019 (18a-B31-5) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Electrical characterization of InGaAs:N δ-doped superlattices
    Ryuji Yoneno, Naoya Miyashita, Yoshitaka Okada, Shuhei Yagi, Hiroyuki Yaguchi
    The 80th JSAP Autumn Meeting 2019 (18a-B31-6) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Biexciton luminescence from individual isoelectronic traps in N-doped GaAs grown on (111) substrates
    Shouhei Takaoka, Kengo Takamiya, Shuhei Yagi, Yuji Hazama, Hidefumi Akiyama, Hiroyuki Yaguchi
    The 80th JSAP Autumn Meeting 2019 (18a-B31-7) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
    Rikiya Onuma, Shuhei Yagi, Hiroyuki Yaguch
    The 80th JSAP Autumn Meeting 2019 (18a-PB3-19) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Fabrication of cubic InN nanowires on GaN V-groove structures
    Yusuke Nishimura, Shuhei Yagi, Hiroyuki Yaguchi
    The 80th JSAP Autumn Meeting 2019 (18a-PB3-20) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Fabrication of UVC AlGaN LEDs on DC-sputter-based AlN templates
    Yosuke Mogami, Atsushi Osawa, Kazuto Osaki, Yukitake Tanioka, Atsushi Maeoka, Yuri Itokazu, Shunsuke Kuwaba, Jo Masafumi, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    The 80th JSAP Autumn Meeting 2019 (18a-E310-9) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Increased Strain Relaxation in AlGaN Layers Grown on Sputter-based AlN Templates
    Yosuke Mogami, Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka, Yuri Itokazu, Shunsuke Kuwaba, Jo Masafumi, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    The 80th JSAP Autumn Meeting 2019 (18a-E310-8) (Sapporo, Japan)
    September 18, 2019
  • (In Japanese) Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method
    Kota Nagata, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
    The 80th JSAP Autumn Meeting 2019 (18p-PB4-11) (Sapporo, Japan)
    September 18, 2019
  • Optical detection of nonradiative recombination levels via intermediate band in GaAs:N δ-doped superlattices
    Norihiko Kamata, Kota Nagata, Md. Dulal Haque, Zentaro Honda, Shuhei Yagi, Hiroyuki Yaguchi and Yoshitaka Okada
    30th International Conference on Defects in Semiconductors (Seattle, USA)
    July 22, 2019
  • Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN Alloys
    Hiroyuki Yaguchi, Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Norihiko Kamata, Y. Hazama and Hidefumi Akiyama
    13th International Conference on Nitride Semiconductors (IP-01.07) (Bellevue, USA)
    July 8, 2019
  • Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter-Based AlN Templates
    Yosuke Mogami, Shogo Motegi, Atsushi Osawa, Kazuo Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi and Hideki Hirayama
    13th International Conference on Nitride Semiconductors (GP-01.12) (Bellevue, USA)
    July 8, 2019
  • Real-time X-ray Diffraction Analysis for the Vacuum Deposition Process of CH3NH3PbI3 perovskite
    Tetsuhiko Miyadera, Yuto Auchi, K. Yamamoto, N. Ohashi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
    10th International Conference on Molecular Electronics & Bioelectronics (FO-10) (Nara, Japan)
    June 27, 2019
  • Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap Excitation Light without Temperature Effect
    S. Ferdous, C. Negishi, Norihiko Kamata, Shuhei Yagi, and Hiroyuki Yaguchi
    Compound Semiconductor Week (TuP-D-10) (Nara, Japan)
    May 21, 2019
  • (In Japanese) Real-time observation of organo-lead halide perovskite film formation process
    Yuto Auchi, Tetsuhiko Miyadera, Kohei Yamamoto, Tomoyuki Koganezawa, Masayuki Chikamatsu, Yuji Yoshida, Hiroyuki Yaguch
    The 66th JSAP Spring Meeting 2019 (9p-S222-2) (Tokyo, Japan)
    March 9, 2019
  • (In Japanese) Fabrication of AlGaN deep-UV LEDs on DC-sputter based AlN films
    Yosuke Mogami, Shogo Motegi, Atsushi Osawa, Kazuto Osaki, Yukitake Tanioka, Atsushi Maeoka, Masafumi Jo, Noritoshi Maeda, Hiroyuki Yaguchi, Hideki Hirayama
    The 66th JSAP Spring Meeting 2019 (11p-W541-5) (Tokyo, Japan)
    March 11, 2019