Publication 2001
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Composition Analysis of SiO2/SiC Interfaces by Electron Spectroscopic Measurements
Using Slope Shaped Oxide Films
Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida
Applied Surface Science Vol. 184, No. 1-4, pp. 161-166 (2001).
DOI: 10.1016/S0169-4332(01)00491-3
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Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge
of GaAsN Alloys
H. Yaguchi, S. Matsumoto, Y. Hijikata, S. Yoshida, T. Maeda, M. Ogura, D. Aoki and K. Onabe
Physica Status Solidi B Vol. 228, No. 1, pp. 269-272 (2001).
DOI: 10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3
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Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys
H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe
Physica Status Solidi B Vol. 228, No. 1, pp. 273-277 (2001).
DOI: 10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N
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Temperature Dependence of Excitonic Gammac-Gammav Transition Energies of
GaxIn1-xP Crystals
Y. Ishitani, H. Yaguchi and Y. Shiraki
Japanese Journal of Applied Physics Vol. 40, No. 3A, pp. 1183-1187 (2001).
DOI: 10.1143/JJAP.40.1183