Publication 2016

• Optical characterization of carrier recombination processes in GaPN by two-wavelength excited photoluminescence
  M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, P. O. Holtz
  2016 Compound Semiconductor Week, INSPEC Accession Number: 16196234 (2016).
  DOI: 10.1109/ICIPRM.2016.7528672
• Two-wavelength excited photoluminescence in 4H-SiC substrate -dependence on BGE power density-
  K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, Z. Honda
  2016 Compound Semiconductor Week, INSPEC Accession Number: 16196083 (2016).
  DOI: 10.1109/ICIPRM.2016.7528594
• Self-organized growth of cubic InN dot arrays on MgO (001) vicinal substrates
  K. Ishii, S. Yagi, and H. Yaguchi
  2016 Compound Semiconductor Week, INSPEC Accession Number: 16195966 (2017).
  DOI: 10.1109/ICIPRM.2016.7528673