Presentation 2017

• Effect of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based elctronic donor material
  Yuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Tomoyuki Koganezawa, Shuhei Yagi, and Hiroyuki Yaguchi
  27th International Photovoltaic Science and Engineering Conference (4ThPo.136) (Otsu, Japan)
  November 16, 2017
• Real-time x-ray diffraction analysis for solvent vapor annealing process of small-molecule fullerene films
  Tetsuhiko Miyadera, Koji Arai, Tomoyuki Koganezawa, Yuki Akiyama, Hiroaki Tachibana, Yuji Yoshida, Masayuki Chikamatsu, Shuhei Yagi, and Hiroyuki Yaguchi
  27th International Photovoltaic Science and Engineering Conference (4ThPo.143) (Otsu, Japan)
  November 16, 2017
• First-princiles study of optical transitions in gallium arsenide:nitrogen delta-doped superlattices
  Hiroki Yoshikawa, Shuhei Yagi, and Hiroyuki Yaguchi
  27th International Photovoltaic Science and Engineering Conference (6ThPo.187) (Otsu, Japan) November 16, 2017
• Influence of nitrogen atomic arrangement in GaAsN alloys on band gap energy
  Kazuki Miyajima, Shuhei Yagi, Yasushi Shoji, Yoshitaka Okada, and Hiroyuki Yaguchi
  27th International Photovoltaic Science and Engineering Conference (6ThPo.190) (Otsu, Japan)
  November 16, 2017
• Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells
  Shuhei Yagi, Yoshitaka Okada, and Hiroyuki Yaguchi
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques- UEC 100th Anniversary Commemorative Event (IN15) (Chofu, Japan)
  October 30, 2017
• First-principles study of optical transitions in dilute nitride semiconductor nanostructures
  Hiroyuki Yaguchi, Shuhei Yagi, and Kengo Takamiya
  6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Como, Italy)
  September 28, 2017
• CH₃NH₃PbI₃ Epitaxial Film with Atomically Smooth Surface Fabricated by IR Laser Deposition Method
  Tetsuhiko Miyadera, Yuto Auchi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
  3rd International Conference on Perovskite Solar Cells and Optoelectronics (C1.06) (Oxford, UK)
  September 20, 2017
• (In Japanese) Effect of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
  Yuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Shuhei Yagi, Hiroyuki Yaguchi
  The 78th JSAP Autumn Meeging 2017 (5p-PA3-7) (Fukuoka, Japan)
  September 5, 2017
• (In Japanese) Influence of Nitrogen Atomic Arrangement in Dilute Nitrides on Band Gap Energy
  Kazuki Miyajima, Shuhei Yagi, Yasushi Shoji, Yoshitaka Okada, Hiroyuki Yaguchi
  The 78th JSAP Autumn Meeging 2017 (5p-C21-1) (Fukuoka, Japan)
  September 5, 2017
• (In Japanese) Upconversion luminescence from GaPN alloys
  Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Takashi Ito, Hidefumi Akiyama, Hiroyuki Yaguchi
  The 78th JSAP Autumn Meeging 2017 (6p-PA7-1) (Fukuoka, Japan)
  September 6, 2017
• (In Japanese) Optical Characterization of Carrier Recombination Processes in GaPN Alloy by Selecting Conduction-Band / Intermediate-Band Excitation
  Chika Negishi, Dulal Haque, Takeshi Fukuda, Norihiko Kamata, Hiroyuki Yaguchi
  The 78th JSAP Autumn Meeging 2017 (6p-A503-3) (Fukuoka, Japan)
  September 6, 2017
• Detection of non-radiative recombination in GaAs:N δ-doped superlattice
  Md Dulal Haque, Norihiko Kamata, Takeshi Fukuda, Zentaro Honda, Shuhei Yagi, Hiroyuki Yaguchi, and Yoshitaka Okada
  29th International Conference on Defects in Semiconductors (ThB1-1) (Matsue, Japan)
  August 3, 2017
• Biexciton emission from single quantum-confined structures in N-polar (000-1) InGaN/GaN multiple quantum wells
  Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi, Hidefumi Akiyama, Kanako Shojiki, Tomoyuki Tanikawa, and Ryuji Katayama
  12th International Conference on Nitride Semiconductors (A2.19) (Strasbourg, France)
  July 26, 2017
• Radiative and nonradiative recombination processes via intermediate band in GaPN by two-wavelength excited photoluminescence
  Chika Negishi, Norihiko Kamata, Md Dulal Haque, Takeshi Fukuda, and Hiroyuki Yaguchi
  12th International Conference on Nitride Semiconductors (B2.46) (Strasbourg, France)
  July 26, 2017
• Electrical characterization of n-type GaAs:N δ-doped superlattices
  Ryo Kato, Shuhei Yagi, Hiroyuki Yaguchi, Yoshitaka Okada
  Compound Semiconductor Week 2017 (P1.21) (Berlin, Germany)
  May 15, 2017
• Carrier recombination levels in intermediate-band type GaPN revealed by time resolved and two-wavelength excited photoluminescence
  Norihiko Kamata, Makiko Suetsugu, Md Dulal Haque, Shuhei Yagi, Hiroyuki Yaguchi, F. Karlsson, P. O. Holtz
  Compound Semiconductor Week 2017 (B5.6) (Berlin, Germany)
  May 17, 2017
• (In Japanese) Epitaxial growth of organolead halide perovskite on rubrene single crystals
  Yuto Auchi, Tetsuhiko Miyadera, Tomoyuki Koganezawa, Masayuki Chikamatsu, Yuji Yoshida, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (14p-313-2) (Yokohama, Japan)
  March 14, 2017
• (In Japanese) Real-time observation of DRCN5T/PCBM bulk heterojunction films during solvent vapor annealing
  Koji Arai, Tetsuhiko Miyadera, Tomoyuki Koganezawa, Yuki Akiyama, Hiroaki Tachibana, Yuji Yoshida, Masayuki Chikamatsu, Shuhei Yagi, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (16p-F201-3) (Yokohama, Japan)
  March 16, 2017
• (In Japanese) Optical Characterization of Carrier Recombination Processes in Intermediate-Band Type GaPN Alloy
  Chika Negishi, Dulal Haque, Norihiko Kamata, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (14p-411-13) (Yokohama, Japan)
  March 14, 2017
• (In Japanese) Electrical properties of n-type GaAs:N δ-doped superlattices
  Ryo Kato, Shuhei Yagi, Yoshitaka Okada, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (15p-P16-8) (Yokohama, Japan)
  March 15, 2017
• (In Japanese) MBE growth temperature dependence of the luminescence from Er doped GaAs
  Daisuke Igarashi, Kengo Takamiya, Shuhei Yagi, Takashi Ito, Hidefumi Akiyama, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (17p-P2-8) (Yokohama, Japan)
  March 17, 2017
• (In Japanese) Fabrication of InGaAs:N δ-doped superlattices for 1 eV subcells
  Shumpei Umeda, Shuhei Yagi, Naoya Miyashita, Yoshitaka Okada, Hiroyuki Yaguchi
  The 64th JSAP Spring Meeting 2017 (14p-B6-9) (Yokohama, Japan)
  March 14, 2017
• Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique
  Shuhei Yagi, Yoshitaka Okada, Hiroyuki Yaguchi
  SPIE Photonics West OPTO (10099-14) (San Francisco, USA)
  January 31, 2017