発表 1999

分光偏光解析による立方晶GaNの光学定数の評価
矢口裕之, 鈴木隆信, 小川大輔, 奥村元, 吉田貞史
第60回応用物理学会学術講演会(3pV2) (神戸) 1999. 9. 3
Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Tokuharu Kimura, Seikoh Yoshida, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
1999 International Conference on Solid State Devices and Materials (C-1-5) (Tokyo) 1999. 9. 21
Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy
Hiroyuki Yaguchi, Jun Wu, Hidefumi Akiyama, Motoyoshi Baba, Kentaro Onabe and Yasuhiro Shiraki
The Third International Conference on Nitride Semiconductors (Montpellier, France) 1999. 7.
Suppression of the hexagonal phase in cubic GaN films by using misoriented GaAs (001) substrates
A. Nagayama, Ryuji Katayama, N. Nakadan, K. Miwa, Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe and Yasuhiro Shiraki
The Third International Conference on Nitride Semiconductors (Montpellier, France) 1999. 7.
Optical characterization of cubic AlGaN epilayers by cathodoluminescence and spectroscopic ellipsometry
Hajime Okumura, T. Koizumi, Yuuki Ishida, Hiroyuki Yaguchi, Sadafumi Yoshida and Shigefusa Chichibu
The Third International Conference on Nitride Semiconductors (Montpellier, France) 1999. 7.
MOVPE growth and luminescence property of GaAsN alloys with higher nitrogen concentrations
Kentaro Onabe, Daiichiro Aoki, Jun Wu, Hiroyuki Yaguchi and Yasuhiro Shiraki
The Third International Conference on Nitride Semiconductors (Montpellier, France) 1999. 7.
Selective growth of cubic GaN on patterned GaAs (100) substrates by metalorganic vapor phase epitaxy
Jun Wu, M. Kudo, A. Nagayama, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
The Third International Conference on Nitride Semiconductors (Montpellier, France) 1999. 7.
Fabrication and Optical Properties of GaAs/AlGaAs Quantum Dot Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
Tomoko Tsujikawa, Seiichrio Mori, Hiroshi Watanabe, Masahiro Yoshita, Hidefumi Akiyama, Rob van Dalen, Kentaro Onabe, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
The 9th International Conference on Modulated Semiconductor Structures (Fukuoka) 1999. 7.
MOVPE Growth of Cubic GaN on Misoriented GaAs(100) Substrates: Growth Suppression of Hexagonal Phase Inclusion
A. Nagayama, Ryuji Katayama, N. Nakadan, K. Miwa, Hiroyuki Yaguchi, Jun Wu, Kentaro Onabe and Yasuhiro Shiraki
18th Electronic Materials Symposium (F7) (Kii-Shirahama) 1999. 7. 1.
Arsenic Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy: Surfactant and Incorporation Behavior
Tokuharu Kimura, Seikoh Yoshida, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
18th Electronic Materials Symposium (F8) (Kii-Shirahama) 1999. 7. 1.
Growth of Cubic GaN on Patterned GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
M. Kudo, Jun Wu, A. Nagayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
18th Electronic Materials Symposium (F9) (Kii-Shirahama) 1999. 7. 1.
High Phase-Purity Cubic GaN on GaAs(100) Grown by MOVPE
Ryuji Katayama, A. Nagayama, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
18th Electronic Materials Symposium (F10) (Kii-Shirahama) 1999. 7. 1.
MOVPE Growth and Luminescemnce Properties of GaAsN Alloys
Daiichiro Aoki, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
18th Electronic Materials Symposium (F15) (Kii-Shirahama) 1999. 7. 1.
Metalorganic Vapor Phase Epitaxy of Cubic GaN and AlGaN on GaAs(100) Substrates and Their Optical Properties
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
The Japan-China Bilateral Symposium on "Novel Methods for Preparation and Evolution of Coatings" (Tokyo) 1999. 3.
GaAsN混晶の発光の温度依存性
青木大一郎, 矢口裕之, 尾鍋研太郎, 白木靖寛
第46回応用物理学関係連合講演会(29a-P-6) (野田)1999. 3. 29
ジメチルヒドラジンを用いたGaNおよびInGaNのMOVPE 成長
セティアグン, 呉軍, 尾鍋研太郎, 白木靖寛, 矢口裕之
第46回応用物理学関係連合講演会(28p-N-2) (野田) 1999. 3. 28
立方晶AlGaNエピ膜の光学特性：カソードルミネッセンス及び分光エリプソメトリー
奥村元, 小泉貴義, 石田夕起, 矢口裕之, 吉田貞史
第46回応用物理学関係連合講演会(29a-N-1) (野田) 1999. 3. 29
GaAs(100)基板上の立方晶GaNのMOVPE選択成長
工藤真大, 長山昭, 呉軍, 矢口裕之, 尾鍋研太郎, 白木靖寛
第46回応用物理学関係連合講演会(30p-M-2) (野田) 1999. 3. 30
Nリッチ立方晶GaNAs混晶のMOVPE成長
木村徳治, 吉田清輝, 呉軍, 矢口裕之, 尾鍋研太郎, 白木靖寛
第46回応用物理学関係連合講演会(30p-M-3) (野田) 1999. 3. 30
GaAs/AlGaAs TSR量子ドットの顕微フォトルミネッセンス測定
辻川智子, 森誠一郎, 渡辺宙志, 尾鍋研太郎, 白木靖寛, 伊藤良一, 吉田正裕, 秋山英文, Rob van Dalen, 矢口裕之
第46回応用物理学関係連合講演会(30p-ZL-7) (野田) 1999. 3. 30
III-V-N系窒化物混晶の電子構造
矢口裕之
第46回応用物理学関係連合講演会(29p-T-4) 9(野田) 1999. 3. 29