発表 2025
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Realizing a High External Quantum Efficiency of 0.44% in 232 nm AlGaN-based far-UVC LED by Suppressing Relaxation in n-AlGaN Layer Via Homoepitaxy
Muhammad Ajmal Khan, Hiromitsu Sakai, M. Nawaz Sharif, Arata Sasaki, Amina Yasin, Yuya Nagata, Yukio Kashima, Mitsuhiro Muta, Yasushi Iwaisako, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Mon-P4) (Malmö, Sweden)
2025. 7. 7
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Experimental and Theoretical Insights into the Relaxed or Strained 230 nm far-UVC LEDs as a Function of Quantum-Well Numbers
M. Nawaz Sharif, Hiromitsu Sakai, Kohei Fujimoto, Yuya Nagata, Hiroyuki Yaguchi, Muhammad Ajmal Khan, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Tue-4) (Malmö, Sweden)
2025. 7. 8
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Nanoscopic Insights into the Structural and Optical Properties of a Far-UVC-LED: Detailed Characterization of Carrier Capture in Active Region
Frank Bertram, Gordon Schmidt, Peter Veit, Juergen Christen, M. Ajmal Khan, Kohei Fujimoto, Yuya Nagata, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Tue-18A) (Malmö, Sweden)
2025. 7. 8
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Polarisation Assisted n-AlGaN Electron Injection Layer in 229 nm far-UVC LEDs for Hole Blocking and Current Density Enhancement
Muhammad Ajmal Khan, Hiromitsu Sakai, M. Nawaz Sharif, Yuya Nagata, Kohei Fujimoto, Amina Yasin, Mitsuhiro Muta, Yasushi Iwaisako, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Tue-20A)(Malmö, Sweden)
2025. 7. 8
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Highly Reflective and Conductive a New Ni/Al/Au p-electrode for 292 nm UVB LED on C-plane Sapphire
Hamida Zia, Amina Yasin, Fujimoto Kohei, Nagata Yuya, Yaguchi Hiroyuki, Muhammad Ajmal Khan, Hirayama Hideki
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Tue-P3) (Malmö, Sweden)
2025. 7. 8
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Above Room Temperature Optical Gain in 3-15 THz Range GaN/AlGaN Quantum-Cascade Laser obtained by NEGF Analysis
Koki Yabe, Airu Takahashi, Akira Kaneko, Li Wang, Ke Wang, Sachie Fujikawa, Krishan Kumar, Shashank Mishra, Thomas Grange, Stefan Birner, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Thu-5) (Malmö, Sweden)
2025. 7. 10
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Marked Enhancement of Optical Gain by Doping for 10 THz-band GaN-based Quantum-Cascade Laser Analyzed by NEGF method
Airu Takahashi, Koki Yabe, Akira Kaneko, Li Wang, Ke Wang, Sachie Fujikawa, Krishan Kumar, Shashank Mishra, Thomas Grange, Stefan Birner, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Thu-P13) (Malmö, Sweden)
2025. 7. 10
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Design and Fabrication of GaN/AlGaN THz Quantum-Cascade Laser Structure on SiC Substrate
Akira Kaneko, Airu Takahashi, Koki Yabe, Li Wang, Ke Wang, Sachie Fujikawa, Krishan Kumar, Shashank Mishra, Hiroyuki Yaguchi, Hideki Hirayama
15th International Conference on Nitride Semiconductors (ICNS 15) (OD-Thu-P14) (Malmö, Sweden)
2025. 7. 10
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Germanium-on-Nothing構造を⽤いたGe薄膜の作製と結晶性評価
范 ⽂博, ⼋⽊ 修平, ⽮⼝ 裕之
第22回「次世代の太陽光発電システム」シンポジウム
(第5回⽇本太陽光発電学会学術講演会) (6-4) (東京)
2025. 7. 4
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Growth of Zn doped and Sn modulation doped InSb1-xNx thin films by
DC/RF magnetron sputtering
Sachie Fujikawa, Yuto Ariji, and Hiroyuki Yaguchi
Compound Semiconductor Week 2025 (P8) (Banff, Canada)
2025. 5. 28
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High-performance UVB and Far-UVC LEDs on Sapphire
Aiming for Inactivation of Viruses and Bacteria
Muhammad Ajmal Khan, Mitsuhiro Muta, Hiromitsu Sakai, Yukio Kashima, Hiroyuki Yaguchi,
Yasushi Iwaisako, Hideki Hirayama
46th Photonics and Electromagnetics Research Symposium (PIERS2025) (Abu Dhabi, United Arab Emirates)
2025. 5. 6
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コア層ドーピング濃度を考慮したGaN系THz-QCLの光利得マッピング解析
矢部 航輝, 高橋 瞳瑠, 金子 瑛, 藤川 紗千恵, 矢口 裕之, クリシャン クマール, シャシャンク ミシュラ, 平山 秀樹
第72回応用物理学会春季学術講演会 (14p-K504-4) (野田)
2025. 3. 14
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自己組織化電子輸送層を用いたペロブスカイト太陽電池の耐熱性の検討
江村 竜聖, 舩木 敬, 山本 晃平, 西村 直之, 矢口 裕之, 村上 拓郎
第72回応用物理学会春季学術講演会 (14p-P08-8) (野田)
2025. 3. 14
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段階塗布法を用いたペロブスカイト成膜におけるペロブスカイト層内の
残留PbI2の影響
石井 聖真, 山本 晃平, 江口 直人, 矢口 裕之, 村上 拓郎
第72回応用物理学会春季学術講演会 (14p-P08-18) (野田)
2025. 3. 14
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Aluminiumization-Assited Influence on the Crystalline Quality of the AIN Template Grown on
c-Sapphire
Amina Yasin, Yuya Nagata, M. Nawaz Sharif, Hamida Zia,
Hiroyuki Yaguchi, M. Ajmal Khan, Hideki Hirayama
第72回応用物理学会春季学術講演会 (16a-K401-6) (野田)
2025. 3. 16
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Germanium-on-Nothing構造形成のためのアニール条件の検討
范 文博, 大島 隆治, 庄司 靖, 菅谷 武芳, 八木 修平, 矢口 裕之
第72回応用物理学会春季学術講演会 (16p-P15-1) (野田)
2025. 3. 16