Yaguchi

論文 2005


  • Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
    Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata, and Sadafumi Yoshida
    Physica Status Solidi C Vol. 2, No. 7, pp. 2267-2270 (2005).
    DOI: 10.1002/pssc.200461386
  • Effect of Ar Post-Oxidation Annealing on Oxide-4H-SiC Interfaces Studied by Capacitance to Voltage Measurements and Photoemission Spectroscopy
    Yasuhiro Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Yuuki Ishida, and Masahito Yoshikawa
    Journal of Vacuum Science and Technology A Vol. 23, No. 2, pp. 298-303 (2005).
    DOI: 10.1116/1.1865153
  • Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation
    Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, and Takeo Hattori
    Materials Science Forum Vol. 483-485, pp. 585-588 (2005).
    DOI: 10.4028/www.scientific.net/MSF.483-485.585