論文 1992

• MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
  Seiro Miyoshi, Kentaro Onabe, Naoki Ohkouchi, Hiroyuki Yaguchi, Ryoichi Ito, Susumu Fukatsu and Yasuhiro Shiraki
  Journal of Crystal Growth Vol. 124, No. 1-4, pp. 439-442 (1992).
  DOI: 10.1016/0022-0248(92)90497-7
• Initial oxidation of MBE-grown Si(100) surfaces
  Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito, Takayuki Igarashi and Takeo Hattori
  Surface Science Vol. 275, No. 3, pp. 395-400 (1992).
  DOI: 10.1016/0039-6028(92)90811-J
• Atomistic picture of interfacial mixing in the Si/Ge heterostructures
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  Surface Science Vol. 267, No. 1-3, pp. 79-82 (1992).
  DOI: 10.1016/0039-6028(92)91093-Q
• Intersubband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing
  Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Hiroyuki Yaguchi and Ryochi Ito
  Applied Physics Letters Vol. 61, No. 2, pp. 210-212 (1992).
  DOI: 10.1063/1.108220
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
  Hiroyuki Yaguchi, Xiong Zhang, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
  Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, pp. 589-591 (1992).
  DOI: 10.7567/SSDM.1992.B-4-5