Yaguchi

論文 1996


  • The optical processes in AlInP/GaInP/AlInP quantum wells
    Yoshihiro Ishitani, Shigekazu Minagawa, Takashi Kita, Taneo Nishino, Hiroyuki Yaguchi and Yasuhiro Shiraki
    Journal of Applied Physics Vol. 80, No. 8, pp. 4592-4598 (1996).
    DOI: 10.1063/1.363829
    Erratum: Journal of Applied Physics Vol. 82, No. 11, p. 5876 (1997).
    DOI: 10.1063/1.366457
  • Anomalous optical absorption in ZnCdSe/ZnSe single quantum wells
    Baoping Zhang, Takanari Yasui, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi and Yasuhiro Shiraki
    Solid State Communications Vol. 99, No. 12, pp. 897-900 (1996).
    DOI: 10.1016/0038-1098(96)00320-1
  • Characterization of Modulation-Doped n-AlxGa1-xAs/GaAs Heterostructure Using Spectroscopic Ellipsometry and Photoreflectance
    Cheong Chee Wong, Maho Mochizuki, Hiroyuki Yaguchi, Tadashi Saitoh and Yi-Ming Xiong
    SPIE, Vol. 2873, pp. 226-229 (1996).
    DOI: 10.1117/12.246226
  • Characterization of Si delta-doped GaAs using photoellipsometry and photoreflectance
    Maho Mochizuki, Kenichiro Kobayashi, Hiroyuki Yaguchi, Tadashi Saitoh and Yi-Ming Xiong
    SPIE, Vol. 2873, pp. 270-273 (1996).
    DOI: 10.1117/12.246238
  • Built-in Electric Field Strength in InP/n+-InP Determined by Photoellipsometry and Photoreflectance
    Yi-Ming Xiong, Tadashi Saitoh, Hiroyuki Yaguchi, Yasuhiro Shiraki
    Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, pp. 724-726 (1996).
    DOI: 10.7567/SSDM.1996.PD-7-3
  • Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures
    Noritaka Usami, Wugen Pan, Hiroyuki Yaguchi, Ryoichi Ito, Kentaro Onabe, Hidefumi Akiyama and Yasuhiro Shiraki
    Appled Physics Letters Vol. 68, No. 23, pp. 3221-3223 (1996).
    DOI: 10.1063/1.116443
  • Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Yasuhiro Shiraki
    Japanese Journal of Applied Physics Vol. 35, No. 2B, pp. 1214-1216 (1996).
    DOI: 10.1143/JJAP.35.1214
  • Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami and Yasuhiro Shiraki
    Institute of Physics Conference Seriers Vol. 145, pp. 925-930 (1996).
  • Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP quantum wells
    Akio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Institute of Physics Conference Series Vol. 145, pp. 403-408 (1996).
  • Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Journal of Crystal Growth Vol. 158, No. 3, pp. 205-209 (1996).
    DOI: 10.1016/0022-0248(95)00449-1
  • Time-resolved photoluminescence study of radiative transition processes in GaP1-xNx alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Institute of Physics Conference Series Vol. 145, pp. 307-312 (1996).