論文 1997


  • Self Formation and Photoluminescence of II-VI Quantum Wires on GaAs(110) Surfaces
    Baoping Zhang, W.X. Wang, G. Isoya, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, K. Onabe, K. Edamatsu and T. Itoh
    Nonlinear Optics, Vol. 18, No. 1-4, pp. 133-136 (1997).
  • Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP1-xNx Alloys: A Growth Interruption Study
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 36, No. 12A, pp. 7110-7118 (1997).
    DOI: 10.1143/JJAP.36.7110
  • In-plane polarization properties of GaAsP/AlAs strained quantum wells on GaAs(113)A and (114)A substrates
    Naoyasu Hiroyasu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
    Institute of Physics Conference Series Vol. 155, pp. 771-774 (1997).
  • The Gammac-Gammav Transition Energies of AlxIn1-xP Alloys
    Yoshihiro Ishitani, Hiroshi Hamada, Shigekazu Minagawa, Hiroyuki Yaguchi and Yasuhiro Shiraki
    Japanese Journal of Applied Physics Vol. 36, No. 11, pp. 6607-6613 (1997).
    DOI: 10.1143/JJAP.36.6607
  • Self Formation and Optical Properties of II-VI Semiconductor Wire Structures
    Baoping Zhang, Wenxin Wang, Takashi Yasuda, Yanqiu Li, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, Keiichi Edamatsu and Tadashi Itoh
    Japanese Journal of Applied Physics Vol. 36, No. 11B, pp. L1490-L1493 (1997).
    DOI: 10.1143/JJAP.36.L1490
  • Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells
    Xiong Zhang, Mitsuteru Ishikawa, Hiroyuki Yaguchi, Kentaro Onabe
    Surface Science Vol. 387, No. 1-3, pp. 371-382 (1997).
    DOI: 10.1016/S0039-6028(97)00401-9
  • Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Applied Physics Letters Vol. 71, No. 15, pp. 2067-2069 (1997).
    DOI: 10.1063/1.119344
  • Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
    Jun Wu, Hiroyuki Yaguchi, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 36, No. 7A, pp. 4241-4245 (1997).
    DOI: 10.1143/JJAP.36.4241
  • Naturally formed ZnCdSe quantum dots on ZnSe (110) surfaces
    Baoping Zhang, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, E. Edamatsu and T. Itoh
    Applied Physics Letters Vol. 70, No. 18, pp. 2413-2415 (1997).
    DOI: 10.1063/1.118888
  • Metalorganic Vapor Phase Epitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs(111)B Substrates
    Tomoko Tsujikawa, Wugen Pan, Keishi Momma, Masahiro Kudo, Kunio Tanaka, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 36, No. 6B, pp. 4102-4106 (1997).
    DOI: 10.1143/JJAP.36.4102
  • Nitrogen concentration dependence of photoluminescence decay time in GaP1-xNx alloys
    Hiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Solid State Electronics Vol. 41, No. 2, pp. 231-233 (1997).
    DOI: 10.1016/S0038-1101(96)00206-7
  • Photoluminescence excitation spectroscopy of GaP1-xNx Alloys: conduction band edge formation by nitrogen incorporation
    Hiroyuki Yaguchi, Seiro Miyoshi, Goshi Biwa, Masaya Kibune, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 353-356 (1997).
    DOI: 10.1016/S0022-0248(96)00592-1
  • A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure
    Wugen Pan, Hiroyuki Yaguchi, Yoshihiko Hanamaki, Mitsuteru Ishikawa, Yasuhisa Kaneko, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Journal of Crystal Growth, Vol. 170, No. 1-4, pp. 585-589 (1997).
    DOI: 10.1016/S0022-0248(96)00593-3
  • High Quality Cubic GaN Growth on GaAs (100) Sbustrates by Metalorganic Vapor Phase Epitaxy
    Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 194-195 (1997).
    DOI: 10.7567/SSDM.1997.C-5-4
  • Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
    Mitsuteru Ishikawa, Wugen Pan, Y. Kaneko, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 342-343 (1997).
    DOI: 10.7567/SSDM.1997.B-11-6
  • GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
    Tomoko Tsujikawa, Keishi Momma, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Itp
    Extended Abstracts of the 1997 International Conference on Solid State Devaices and Materials, pp. 318-319 (1997).
    DOI: 10.7567/SSDM.1997.B-10-3