発表 2024

Formation of thick germanium-on-nothing structures via inductively coupled plasma reactive ion etching
Wenbo Fan, Ryuji Oshima, Yasushi Shoji, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguchi
35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (We2f-O43-03) (Numazu, Japan)
2024 11. 13
Enhanced reflectivity of InGaAs solar cells using patterned dielectric back contacts for thermophotovoltaic applications
Masaki Date, Ryuji Oshima, Yasushi Shoji, Hitoshi Sai, Makoto Shimizu, Takeyoshi Sugaya, Shuhei Yagi, Hiroyuki Yaguch
35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th2-P-43-08) (Numazu, Japan)
2024 11. 14
Naphthalenediimide electron transport materials as the self-assembled monolayers for perovskite solar cells
Takashi Funaki, Masahiro Kashiwazaki, Kohei Yamamoto, Ryusei Emura, Hiroyuki Yaguchi, Takurou N. Murakami
35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th1-P-51-19) (Numazu, Japan)
2024 11. 14
Demonstration of thermoradiative power conversion from InAsSb based mid-infrared light emitting diodes
Muhammad Waleed Akram, Naoya Sagawa, Shuhei Yagi, Hiroyuki Yaguchi
35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Tu4-P-52-40) (Numazu, Japan)
2024 11. 12
Below-gap photon induced photocurrent enhancement in GaPN intermediate band solar cell fabricated by ion implantation
Md Mamun Or Rashid, Kyoko Munakata, Shuhei Yagi, Hiroyuki Yaguchi
35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Th1f-O52-04) (Numazu, Japan)
2024 11. 14
Effect of n-type AlGaN buffer layer's growth temperature on relaxation and conductivity in 228-230 nm Far-UVC LED grown on c-sapphire
Muhammad Ajmal Khan, Mitsuhiro Muta, Kohei Fujimoto, Yukio Kashima, Sachie Fuikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
2024 IEEE Photonics Conference (TuC2.4) (Rome, Italy)
2024. 11. 12
自己組織化電子輸送膜を用いたペロブスカイト太陽電池の耐久性の検討
江村竜聖, 舩木敬, 山本晃平, 西村直之, 矢口裕之, 村上拓郎
2024年度色材研究発表会 (1P10) (東京)
2024. 10. 30
Examining the Influence of Growth Temperature on n-AlGaN Buffer Layer and Quantum-Well of (228-230 nm)-Band far-UVC LEDs
Muhammad Ajmal Khan, Mitsuhiro Muta, Hiroyuki Oogami, Kohei Fujimoto, Yuya Nagata, Yukio Kashima, Eriko Matsuura, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) (P1-021) (Busan, Korea)
2024. 10. 17
Reduction of Forward Voltage in 230 nm AlGaN far-UVC LED Using Polarization Assisted AlGaN Hole Injection Layer
Kohei Fujimoto, Mitsuhiro Muta, Muhammad Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
11th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) (WA3-6) (Busan, Korea)
2024. 10. 16
Design of single metal plasmon waveguide GaN-based THz-QCL used AlN substrate
Akira Kaneko, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
第43回電子材料シンポジウム (We2-2) (橿原)
2024. 10. 2
As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
Yuki Shirakawa, Yohei Nukaga, Hiroyuki Yaguchi, and Sachie Fujikawa
第43回電子材料シンポジウム (Fr1-6) (橿原)
2024. 10. 4
Fabrication of PIN structure using InSb_1-xN_x thin films by magnetron sputtering
Yuto Ariji, Hiroyuki Yaguchi, and Sachie Fujikawa
第43回電子材料シンポジウム (Fr1-25) (橿原)
2024. 10. 4
Analysis of doping density dependence of optical gain of 10 THz-band GaN-based QCL
Airu Takahashi, Li Wang, Sachie Fujikawa, Hiroyuki Yaguchi, and Hideki Hirayama
第43回電子材料シンポジウム (Fr1-31) (橿原)
2024. 10. 4
Methylammonium Tetrafluoroborate Additive for Spontaneous Heterointerface Modulation in FAPbI₃-Based Perovskite Solar Cells
Daisuke Kubota, Ryuzi Katoh, Hiroyuki Kanda, Hiroyuki Yaguchi, Takurou N. Murakami, Naoyuki Nishimura
41st European Photovotalic Solar Energy Conference and Exhibtion (Vienna, Austria)
2024. 9. 25
分極ドープ層導⼊による230nm帯AlGaN far-UVC LEDの特性改善
藤本康平, 牟⽥実広, カーンアジマル, 藤川紗千恵, ⽮⼝裕之, 祝迫恭, 平⼭秀樹
第85回応用物理学会秋季学術講演会 (16p-A21-13) (新潟)
2024. 9. 16
Revisiting the Growth Temperature Dependence of n-AlGaN Buffer Layer and Quantum-Well in (228-230 nm)-Band far-UVC LEDs
Muhammad Ajmal Khan, Mitsuhiro Muta, Kohei Fujimoto, Yuya Nagata, Yukio Kashima, Eriko Matsuura, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
第85回応用物理学会秋季学術講演会 (16p-A21-14) (新潟)
2024. 9. 16
InGaAs熱光起電⼒発電セルへ向けたパターン化誘電体裏⾯電極の作製
伊達仁基, ⼤島隆治, 庄司靖, 斎均, 清⽔信, 菅⾕武芳, ⼋⽊修平, ⽮⼝裕之
第85回応用物理学会秋季学術講演会 (18p-B1-14) (新潟)
2024. 9. 18
GON構造形成に向けたGeの異⽅性エッチングとアニール処理の検討
范⽂博, ⼤島隆治, 庄司靖, 菅⾕武芳, ⼋⽊修平, ⽮⼝裕之
第85回応用物理学会秋季学術講演会 (18p-B1-20) (新潟)
2024. 9. 18
テトラフルオロホウ酸メチルアンモニウム添加によるFAPbI₃ペロブスカイト太陽電池のヘテロ界⾯改善
久保⽥⼤介, 加藤隆⼆, 神⽥広之, ⽮⼝裕之, 村上拓郎, ⻄村直之
第85回応用物理学会秋季学術講演会 (19p-C302-10) (新潟)
2024. 9. 19
Photocurrent enhancement in ion-implanted GaPN intermediate-band solar cell
Rashid Or Md Mamun, Kyoko Munakata, Shuhei Yagi, Hiroyuki Yaguchi
第85回応用物理学会秋季学術講演会 (19p-P07-6) (新潟)
2024. 9. 19
アンチモンサーファクタントを利⽤して成⻑したGaPN混晶のフォトルミネッセンスによる評価
⼋⽊航哉, 斎⽥響, ⼋⽊修平, ⽮⼝裕之, 久野倭, ⼭根啓輔
第85回応用物理学会秋季学術講演会 (19p-P09-5) (新潟)
2024. 9. 19
MBE法を⽤いたBeドープInSb薄膜の成⻑と電気的特性評価
星野陸, 漆⼾祐哉, ⽮⼝裕之, 藤川紗千恵
第85回応用物理学会秋季学術講演会 (19p-P09-6) (新潟)
2024. 9. 19
Sb照射によりGaSbを形成したGaAs基板上へのInSbのAsフリー成⻑
⽩川裕暉, 額賀陽平, ⽮⼝裕之, 藤川紗千恵
第85回応用物理学会秋季学術講演会 (19p-P09-7) (新潟)
2024. 9. 19
スパッタ法によるSnドープ及びZn変調ドープInSb_1-xN_x薄膜成⻑
藤川紗千恵, 有路結⽃, ⽮⼝裕之
第85回応用物理学会秋季学術講演会 (19p-P09-8) (新潟)
2024. 9. 19
マグネトロンスパッタ法によるInSb_1-xN_x 薄膜を⽤いたPIN 構造の作製
有路結⽃, ⽮⼝裕之, 藤川紗千恵
第85回応用物理学会秋季学術講演会 (19p-P09-9) (新潟)
2024. 9. 19
AlN基板を⽤いた⽚⾯⾦属導波路GaN系THz-QCLの導波路解析
⾦⼦瑛, 藤川紗千恵, ⽮⼝裕之, 平⼭秀樹
第85回応用物理学会秋季学術講演会 (20a-A34-1) (新潟)
2024. 9. 20
GaN系10THz帯量⼦カスケードレーザー光利得のドーピング濃度依存性
⾼橋瞳瑠, 王利, 藤川紗千恵, ⽮⼝裕之, 平⼭秀樹
第85回応用物理学会秋季学術講演会 (20a-A34-2) (新潟)
2024. 9. 20
RF-MBE法で作製したInN/GaN量⼦ドットの室温PLスペクトルの観測
⼩島⼀真, ⼋⽊修平, ⽮⼝裕之
第85回応用物理学会秋季学術講演会 (20a-P02-2) (新潟)
2024. 9. 20
Achievement of 0.01% EQE in 222 nm AlGaN Far-UVC LED using Al-Graded AlGaN Polarization Doping layer
Ranga Raju Harshitha, Yuki Nakamura, Sachie Fujikawa, M. Ajmal Khan, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
The 7th International Workshop on UV Materials and Devices (TA25) (Taipei, Taiwan)
2024. 6. 4
RIKEN Progress of 0.32% EQE in 228 nm Far-UVC LED and 10% EQE in UVB LED grown on c-Sapphire
Muhammad Ajmal Khan, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, and Hideki Hirayama
The 7th International Workshop on UV Materials and Devices (TA23) (Taipei, Taiwan)
2024. 6. 2
Increasing the Efficiency of 219-222 nm AlGaN Far-UVC LEDs with Graded Al Content AlGaN Polarization Doping Layers
Hideki Hirayama, Harshitha Rangaraju, Yuki Nakamura, Sachie Fujikawa, M. Ajmal Khan, Hiroyuki Yaguchi and Yasushi Iwaisako
The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.3) (Las Vegas, USA)
2024. 5. 16
225 nm Band AlGaN Far-UVC LED on c-Sapphire with EQE of 0.022%
Muhammad Ajmal Khan, Taiga Kirihara, Mitsuhiro Muta, Oogami Hiroyuki, Kouhei Fujimoto, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako and Hideki Hirayama
The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.4) (Las Vegas, USA)
2024. 5. 16
Thermal Investigation of AlGaN UVB LED on c-Sapphire having External-Quantum Efficiency of 10%
Muhammad Ajmal Khan, Javier Gonzalez Rojas, Pablo Fredes, Ernesto Gramsch, Yukio Kashima, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama
The 21st International Conference on Metalorganic Vapor Phase Epitaxy (4B-2.5) (Las Vegas, USA)
2024. 5. 16
InGaAs熱光起電力セルへ向けた表面電極改善による直列抵抗低減
伊達仁基, 大島隆治, 庄司靖, 菅谷武芳, 八木修平, 矢口裕之
第71回応用物理学会春季学術講演会 (24p-P06-2) (東京)
2024. 3. 24
基板再利用技術に向けたICP-RIEを用いたGeの異方性エッチング
范文博, 大島隆治, 庄司靖, 菅谷武芳, 八木修平, 矢口裕之
第71回応用物理学会春季学術講演会 (24p-P06-3) (東京)
2024. 3. 24
Analysis of Two Step Photocurrent Generation in GaAsN-Based Intermediate Band Solar Cells Based on Device Simulation
Md Faruk Hossain, Shuhei Yagi, Hiroyuki Yaguch
第71回応用物理学会春季学術講演会 (24p-P06-15) (東京)
2024. 3. 24
Two-wavelength excited photoluminescence study of GaAsN/GaAs heterostructures
Abdou Karim Niang, Naofumi Uchiyama, Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi
第71回応用物理学会春季学術講演会 (25a-P02-4) (東京)
2024. 3. 25
分極ドープ層を用いた 222 nm AlGaN far-UVC LED の高効率化
Rangaraju Harshitha, 中村勇稀, 住司光, Khan Ajmal, 藤川紗千恵, 矢口裕之, 遠藤聡, 藤代博記, 祝迫恭, 平山秀樹
第71回応用物理学会春季学術講演会 (24p-61C-12) (東京)
2024. 3. 24
ペロブスカイト太陽電池のSAM電荷輸送層の開発
柏﨑正篤, 千明拓馬, 舩木敬, 古郷敦, 山本晃平, 西村直之, 矢口裕之, 村上拓郎
電気化学会第91回大会 (S3 3 01) (名古屋)
2024. 3. 16