論文 2010

• Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
  Toshiyuki Fukushima, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Makoto Okano, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
  Physica E Vol. 42, No 10, pp. 2529-2531 (2010).
  DOI: 10.1016/j.physe.2009.12.011
• RF-MBE growth of InN on 4H-SiC (0001) with off-angles
  Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, and Hiroyuki Yaguchi
  Physica Status Solidi C Vol. 7, No. 7-8, pp. 2016-2018 (2010).
  DOI: 10.1002/pssc.200983441
• In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
  Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  Materials Science Forum Vols. 645-648, pp. 813-816 (2010).
  DOI: 10.4028/www.scientific.net/MSF.645-648.813
• Model calculations of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
  Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  Materials Science Forum Vols. 645-648, pp. 809-812 (2010).
  DOI: 10.4028/www.scientific.net/MSF.645-648.809