Yaguchi

論文 1993


  • 第6回半導体超構造国際会議(MSS6)参加報告
    矢口 裕之
    電子工業月報 Vol. 35, No. 12, pp. 69-77 (1993).
  • Metalorganic vapor phase epitaxy of GaP1-xNx alloys on GaP
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Applied Physics Letters Vol. 63, No. 25, pp. 3506-3508 (1993).
    DOI: 10.1063/1.110109
  • Self-Modulating Incorporation of Sb in Si/SiGe Superlattices During Molecular Beam Epitaxy
    Ken Fujita, Susumu Fukatsu, Noritaka Usami, Hiroyuki Yaguchi, Yasuhiro Shiraki, and Ryoichi Ito
    Materials Science Forum Vol. 117-118, pp. 159-164 (1993).
    DOI: 10.4028/www.scientific.net/MSF.117-118.159
  • Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth
    Ken Fujita, Susumu Fukatsu, Noritaka Usami, Yasuhiro Shiraki, Hiroyuki Yaguchi, Ryoichi Ito and Kiyokazu Nakagawa
    Surface Science Vol. 295, No. 3, pp. 335-339 (1993).
    DOI: 10.1016/0039-6028(93)90280-W
  • MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, pp. 113-115 (1993).
    DOI: 10.7567/SSDM.1993.D-1-4
  • Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Extended Abstracts of the 1993 International Conference on Solid Stated Device and Materials, pp. 910-912 (1993).
    DOI: 10.7567/SSDM.1993.S-I-6-6
  • Is Low Temperature Growth the Solution to Abrupt S/Si1-xGex Interface Formation?
    Susumu Fukatsu, Noritaka Usami, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
    Journal of Crystal Growth Vol. 127, No. 1-4, pp. 401-405 (1993).
    DOI: 10.1016/0022-0248(93)90648-G
  • Intersubband absorption in n-type Si/Si1-xGex multiple quantum well structures formed by Sb segregant-assisted growth
    Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Hiroyuki Yaguchi and Ryoichi Ito
    Journal of Crystal Growth Vol. 127, No. 1-4, pp. 416-420 (1993).
    DOI: 10.1016/0022-0248(93)90651-C
  • Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Yutaka Takahashi, Koji Muraki and Yasuhiro Shiraki
    Applied Physics Letters Vol. 63, No. 7, pp. 946-948 (1993).
    DOI: 10.1063/1.109853
  • GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
    Xiong Zhang, Koichi Karaki, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 32, No. 6A, pp. L755-L757 (1993).
    DOI: 10.1143/JJAP.32.L755
  • Highly conductive p-type cubic GaN epitaxial films on GaAs
    Seiro Miyoshi, Naoki Ohkouchi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Institute of Physics Conference Series Vol. 129, pp. 79-84 (1993).
  • Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
    Hiroyuki Yaguchi, Xiong Zhang, Kazunobu Ota, Masaki Nagahara, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Appled Physics Vol. 32, No. 1B, pp. 544-547 (1993).
    DOI: 10.1143/JJAP.32.544
  • Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs1-xPx Strained-Barrier Single Quantum Well Structures
    Xiong Zhang, Kentaro Onabe, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 32, No. 3B, pp. L375-L378 (1993).
    DOI: 10.1143/JJAP.32.L375