Yaguchi

論文 2008


  • Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
    Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    Japanese Journal of Applied Physics Vol. 47, No. 10R, pp. 7803-7806 (2008).
    DOI: 10.1143/JJAP.47.7803
  • High Resolution X-ray Diffraction and Raman Scattering Studies of Cubic-phase InN Films Grown by MBE
    S. Kuntharin, S. Sanorpim, Hiroyuki Yaguchi, Yohei Iwahashi, Misao Orihara, Yasuto Hijakata and Sadafumi Yoshida
    Advanced Materials Research Vols. 55-57, pp. 773-776 (2008).
    DOI: 10.4028/www.scientific.net/AMR.55-57.773
  • Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
    Yuta Endo, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Masahiro Yoshita, Hidefumi Akiyama, F. Nakajima, Ryuji Katayama, Kentaro Onabe
    Physica E Vol. 40, No. 6, pp. 2110-2112 (2008).
    DOI: 10.1016/j.physe.2007.10.047
  • Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers
    Go Shikata, Shigeru Hirano, T. Inoue, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    Physica Status Solidi C Vol. 5, No. 6, pp. 1808-1810 (2008).
    DOI: 10.1002/pssc.200778662
  • Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy
    Shigeru Hirano, T. Inoue, Go Shikata, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, and Y. Hirabayashi
    Physica Status Solidi C Vol. 5, No. 6, pp. 1730-1732 (2008).
    DOI: 10.1002/pssc.200778606
  • Photoluminescence of cubic InN films on MgO (001) substrates
    T. Inoue , Yohei Iwahashi, Shingo Oishi, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
    Physica Status Solidi C Vol. 5, No. 6, pp. 1579-1581 (2008).
    DOI: 10.1002/pssc.200778505
  • 局所ドーピング半導体による単一光子発生に関する研究
    矢口 裕之
    旭硝子財団助成研究成果報告 pp. 1-7 (2008).