論文 2002

• X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
  Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa and Sadafumi Yoshida
  Materials Science Forum Vol. 389-393, No. 2, pp. 1033-1036 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.1033
• Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  Yuiichi Tomioka, Takeshi Iida, Masahiko Midorikawa, H. Tukada, K. Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, R. Kosugi and Sadafumi Yoshida
  Materials Science Forum Vol. 389-393, No. 2, pp. 1029-1032 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.1029
• Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
  Hiroyuki Yaguchi, Ka Narita, Yasuto Hijikata, Sadafumi Yoshida, Shinichi Nakashima and N. Oyanagi
  Materials Science Forum Vol. 389-393, pp. 621-624 (2002).
  DOI: 10.4028/www.scientific.net/MSF.389-393.621
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
  Takeshi Iida, Yuichi Tomioka, Kazuo Yoshimoto, Masahiko Midorikawa, Hiroyuki Tukada, Misao Orihara, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Hisayoshi Itoh, Yuuki Ishida and Sadafumi Yoshida
  Japanese Journal of Applied Physics Vol. 41, No. 2A, pp. 800-804 (2002).
  DOI: 10.1143/JJAP.41.800
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution
  Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Hiroyuki Yaguchi, Yoshihiro Murakami and Kazuo Nakajima
  Japanese Journal of Applied Physics Vol. 41, No. 1A/B, pp. L37-L39 (2002).
  DOI: 10.1143/JJAP.41.L37