Yaguchi

論文 2013


  • Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs
    Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
    AIP Conference Proceedings Vol. 1566, pp. 538-539 (2013).
    DOI: 10.1063/1.4848523
  • Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy
    Shuhei Yagi, Junichiro Suzuki, Misao Orihara, Yasuto Hijikata, and Hiroyuki Yaguchi
    Physica Status Solidi C Vol. 10, No. 11, pp. 1545-1548 (2013).
    DOI: 10.1002/pssc.201300275
  • Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices
    Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, and Hiroyuki Yaguchi
    Japanese Journal of Applied Physics Vol. 52, No. 10, pp. 102302-1-4 (2013).
    DOI: 10.7567/JJAP.52.102302
  • Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
    Shunsuke Noguchi, Shuhei Yagi, Daisuke Sato, Yasuto Hijikata, Kentaro Onabe, Shigeyuki Kuboya, and Hiroyuki Yaguchi
    IEEE Journal of Photovoltaics Vol. 3, No. 4, pp. 1287-1291 (2013).
    DOI: 10.1109/JPHOTOV.2013.2271978
  • Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence
    Abu Zafor Muhammad Touhidul Islam, Tsukasa Hanaoka, Kentaro Onabe, Shuhei Yagi, Norihiko Kamata, and Hiroyuki Yaguchi
    Applied Physics Express Vol. 6, No. 9, pp. 092401-1-3 (2013).
    DOI: 10.7567/APEX.6.092401
  • RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
    M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
    Journal of Crystal Growth Vol. 378, pp. 307-309 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.120
  • RF-MBE growth of cubic InN nano-scale dots on cubic GaN
    Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi
    Journal of Crystal Growth Vol. 378, pp. 454-458 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.050
  • Molecular beam epitaxy of ErGaAs alloys on GaAs (001)
    Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    Journal of Crystal Growth Vol. 378, pp. 85-87 (2013).
    DOI: 10.1016/j.jcrysgro.2012.12.043
  • Observation of optical spin injection into Ge-based structures at room temperature
    Yuhsuke Yasutake, Shuhei Hayashi, Hiroyuki Yaguchi, and Susumu Fukatsu
    Applied Physics Letters Vol. 102, No. 24, pp. 242104-1-4 (2013).
    DOI: 10.1063/1.4811495
  • Optical Properties and Carrier Dynamics in Asymmetric Coupled InGaN Multiple Quantum Wells
    Guo-En Weng, Bao-ping Zhang, Ming-ming Liang, Xue-qin Lv, Jiang-Yong Zhang, Lei-Ying Ying, Zhi-Ren Qiu, Hiroyuki Yaguchi, Shigeyuki Kuboya, Kentaro Onabe, Shao-Qiang Chen, and Hidefumi Akiyama
    Functional Materials Letters Vol. 06, No. 2, pp. 1350021-1-5 (2013).
    DOI: 10.1142/S1793604713500215
  • Model calculations of SiC oxide growth rates at sub-atomospheric pressures using the Si and C emission model
    Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida
    Materials Science Forum Vols. 740-742, pp. 833-836 (2013).
    DOI: 10.4028/www.scientific.net/MSF.740-742.833
  • Optical absorption by E+ miniband of GaAs:N δ-doped superlattices
    S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi
    2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), pp. 2490-2493 (2013).
    DOI: 10.1109/PVSC.2013.6744981
  • SiC酸化メカニズム解明への試み: Si酸化との共通点/異なる点
    土方 泰斗, 八木 修平, 矢口 裕之
    電子情報通信学会技術研究報告 Vol. 113, No.87, pp. 91-96 (2013).