Yaguchi

論文 2015


  • Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
    Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
    AIP Advances Vol. 5, No. 12, pp. 127116-1-6 (2015).
    DOI: 10.1063/1.4938126
  • Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE
    P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara and P. Limsuwan
    Journal of Semiconductors Vol. 36, No. 8, pp. 083002-1-5 (2015).
    DOI: 10.1088/1674-4926/36/8/083002
  • Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices
    Tomoya Suzuki, Kazuki Osada, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi
    Japanese Journal of Applied Physics Vol. 54, No. 8S1, pp. 08KA07-1-5 (2015).
    DOI: 10.7567/JJAP.54.08KA07
  • Control of intermediate-band configuration in GaAs:N δ-doped superlattice
    Kazuki Osada, Tomoya Suzuki, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi
    Japanese Journal of Applied Physics Vol. 54, No. 8S1, pp. 08KA04-1-3 (2015).
    DOI: 10.7567/JJAP.54.08KA04
  • Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
    Daisuke Goto, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
    Materials Science Forum Vols. 821-823, pp. 371-374 (2015).
    DOI: 10.4028/www.scientific.net/MSF.821-823.371
  • Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
    Yutaro Miyano, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
    Materials Science Forum Vols. 821-823, pp. 327-330 (2015).
    DOI: 10.4028/www.scientific.net/MSF.821-823.327
  • Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
    Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
    Japanese Journal of Applied Physics Vol. 54, No. 5, pp. 051201-1-4 (2015).
    DOI: 10.7567/JJAP.54.051201
  • Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
    Daisuke Goto, Yasuto Hijikata, Shuhei Yagi, and Hiroyuki Yaguchi
    Journal of Applied Physics Vol. 117, No. 9, pp. 095306-1-6 (2015).
    DOI: 10.1063/1.4914050