論文 1998
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Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular
Beam Epitaxy
Shinji Koh, Takashi Kondo, Tetsuya Ishiwada, Chihiro Iwamoto, Hideki Ichinose, Hiroyuki Yaguchi,
Noritaka Usami, Yasuhiro Shiraki and Ryoichi Ito
Japanese Journal of Applied Physics Vol. 37, No. 12B, pp. L1493-1496 (1998).
DOI: 10.1143/JJAP.37.L1493
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MOVPE growth of GaPAsN quaternary alloys lattice-matched to GaP
Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe, and Yasuhiro Shiraki
Materials Research Society Proceedings Vol. 482, pp. 173-178
(1998).
DOI: 10.1557/PROC-482-173
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カソードルミネッセンスによる半導体低次元構造の評価
矢口 裕之, 辻川 智子, 尾鍋 研太郎
電子顕微鏡 Vol. 33, No. Supplement2, pp. 217-220 (1998).
LINK
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A New Approach to ZnCdSe Quantum Dots
Baoping Zhang, Takashi Yasuda, W. X. Wang, Yusaburo Segawa, K. Edamatsu, T. Itoh,
H. Yaguchi and K. Onabe
Materials Science and Engineering B Vol. 51 No. 1-3, pp. 127-131 (1998).
DOI: 10.1016/S0921-5107(97)00245-6
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Self-Assembled, Very Long II-VI Semiconductor Quantum Wires
Baoping Zhang, W. X. Wang, Takashi Yasuda, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe,
K. Edamatsu and T. Itoh
Materials Science and Engineering B Vol. 51, No. 1-3, pp. 224-228 (1998).
DOI: 10.1016/S0921-5107(97)00265-1
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Exciton diffusion dynamics in quantum nanostructures on V-groove patterned
substrates
Noritaka Usami, Yasuhiro Shiraki, Wugen Pan, Hiroyuki Yaguchi and Kentaro Onabe
Superlattices and Microstructures Vol. 23, No. 2, pp. 395-400 (1998).
DOI: 10.1006/spmi.1996.0285
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Theoretical study of conduction band edge formation in GaP1-xNx
alloys using a tight-binding approximation
Hiroyuki Yaguchi
Journal of Crystal Growth Vol. 189-190, pp. 500-504 (1998).
DOI: 10.1016/S0022-0248(98)00339-X
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Molecular beam epitaxy of SiGe heterostructures using a newly designed
Si effusion cell
Hiroyuki Yaguchi, Takatoshi Yamamoto and Yasuhiro Shiraki
Materials Science and Engineering Vol. B51, No. 1-3, pp. 170-172 (1998).
DOI: 10.1016/S0921-5107(97)00254-7
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GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on
GaAs(111)B Substrates by Metalorganic Vapor Phase Epitaxy
Tomoko Tsujikawa, Keishi Momma, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1493-1496 (1998).
DOI: 10.1143/JJAP.37.1493
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Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs(100)
Substrates
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1440-1442 (1998).
DOI: 10.1143/JJAP.37.1440
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Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs
Quantum Wire-Like Lasers
Mitsuteru Ishikawa, Wugen Pan, Yasuhisa Kaneko, Hiroyuiki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro
Shiraki
Japanese Journal of Applied Physics Vol. 37, No. 3B, pp.1556-1558 (1998).
DOI: 10.1143/JJAP.37.1556
Erratum: Japanese Journal of Applied Physics Vol. 37, No. 7, p. 4230 (1998).
DOI: 10.1143/JJAP.37.4230
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Characterization of SiGe Strained Heterostructure Grown by Molecular Beam
Epitaxy Using a Si Effusion Cell
Hiroyuki Yaguchi, Takatoshi Yamamoto and Yasuhiro Shiraki
Thin Solid Films Vol. 321, No. 1-2, pp. 241-244 (1998).
DOI: 10.1016/S0040-6090(98)00480-5
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Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic
device applications
Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki
Yaguchi, Kentaro Onabe
Journal of Crystal Growth Vol. 189-190, pp. 227-230 (1998).
DOI: 10.1016/S0022-0248(98)00241-3
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Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic
vapor-phase epitaxy
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
Journal of Crystal Growth Vol. 189-190, pp. 415-419 (1998).
DOI: 10.1016/S0022-0248(98)00311-X
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Investigation of luminescence properties of GaN single crystals grown on
3C-SiC substrates
Jun Wu, Hiroyuki Yaguchi, Hiroyuki Nagasawa, Yoichi Yamaguchi, Kentaro Onabe, Yasuhiro Shiraki
and R. Ito
Journal of Crystal Growth Vol. 189-190, pp. 420-424 (1998).
DOI: 10.1016/S0022-0248(98)00312-1
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Metalorganic vapor-phase epitaxy of GaP1-x-yAsyNx
quaternary alloys on GaP
Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
Journal of Crystal Growth Vol. 189-190, pp. 485-489 (1998).
DOI: 10.1016/S0022-0248(98)00336-4
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Temperature dependence of photoluminescence of GaP1-xNx
alloys
Hiroyuki Yaguchi, Goshi Biwa, Seiro Miyoshi, Daiichiro Aoki, Keisuke Arimoto, Kentaro Onabe, Ryoichi
Ito and Yasuhiro Shiraki
Journal of Crystal Growth Vol. 189-190, pp. 496-499 (1998).
DOI: 10.1016/S0022-0248(98)00338-8
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Metalorganic vapor phase epitaxy growth and photoluminescence properties
of cubic AlxGa1-xN
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
Applied Physics Letters Vol. 73, No. 2, pp. 193-195 (1998).
DOI: 10.1063/1.121752
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Metalorganic Vapor Phase Epitaxy of High Quality Cubic GaN,AlGaN and Their
Application to Optical Devices
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes,
pp. 715-718 (1998).
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Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN
heterostructure grown on GaAs (100) substrate
Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
Applied Physics Letters Vol. 73, No. 14, pp. 1931-1933 (1998).
DOI: 10.1063/1.122326
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Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001)
substrates by metalorganic vapor phase epitaxy
Hiroyuiki Yaguchi, Jun Wu, Baoping Zhang, Yusaburo Segawa, Hiroyuki Nagasawa, Kentaro Onabe and Yasuhiro
Shiraki
Journal of Crystal Growth Vol. 195, No.1-4, pp. 323-327 (1998).
DOI: 10.1016/S0022-0248(98)00672-1
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Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP
lattice-matched multiple quantum well structures
Goshi Biwa, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
Journal of Crystal Growth Vol. 195, No. 1-4, pp. 574-578 (1998).
DOI: 10.1016/S0022-0248(98)00734-9