Yaguchi

発表 2017


  • Effect of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based elctronic donor material
    Yuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Tomoyuki Koganezawa, Shuhei Yagi, and Hiroyuki Yaguchi
    27th International Photovoltaic Science and Engineering Conference (4ThPo.136) (Otsu, Japan) 2017. 11. 16
  • Real-time x-ray diffraction analysis for solvent vapor annealing process of small-molecule fullerene films
    Tetsuhiko Miyadera, Koji Arai, Tomoyuki Koganezawa, Yuki Akiyama, Hiroaki Tachibana, Yuji Yoshida, Masayuki Chikamatsu, Shuhei Yagi, and Hiroyuki Yaguchi
    27th International Photovoltaic Science and Engineering Conference (4ThPo.143) (Otsu, Japan) 2017. 11. 16
  • First-princiles study of optical transitions in gallium arsenide:nitrogen delta-doped superlattices
    Hiroki Yoshikawa, Shuhei Yagi, and Hiroyuki Yaguchi
    27th International Photovoltaic Science and Engineering Conference (6ThPo.187) (Otsu, Japan) 2017. 11. 16
  • Influence of nitrogen atomic arrangement in GaAsN alloys on band gap energy
    Kazuki Miyajima, Shuhei Yagi, Y. Shoji, Yoshitaka Okada, and Hiroyuki Yaguchi
    27th International Photovoltaic Science and Engineering Conference (6ThPo.190) (Otsu, Japan) 2017. 11. 16
  • Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells
    Shuhei Yagi, Yoshitaka Okada, and Hiroyuki Yaguchi
    International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques- UEC 100th Anniversary Commemorative Event (IN15) (Chofu, Japan) 2017. 10. 30
  • First-principles study of optical transitions in dilute nitride semiconductor nanostructures
    Hiroyuki Yaguchi, Shuhei Yagi, and Kengo Takamiya
    6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Como, Italy) 2017. 9. 28
  • CH3NH3PbI3 Epitaxial Film with Atomically Smooth Surface Fabricated by IR Laser Deposition Method
    Tetsuhiko Miyadera, Yuto Auchi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, Yuji Yoshida, Masayuki Chikamatsu
    3rd International Conference on Perovskite Solar Cells and Optoelectronics (C1.06) (Oxford, UK) 2017. 9. 20
  • 新規可溶性オリゴチオフェン系電⼦ドナー材料を⽤いた有機薄膜太陽電池への溶媒蒸気アニーリング効果
    秋⼭ 雄希, 橘 浩昭, 阿澄 玲⼦, 宮寺 哲彦, 近松 真之, ⼋⽊ 修平, ⽮⼝ 裕之
    第78回応用物理学会秋季学術講演会 (5p-PA3-7) (福岡) 2017. 9. 5
  • 希釈窒化物半導体中の窒素原⼦配置によるバンドギャップへの影響
    宮島 数喜, ⼋⽊ 修平, 庄司 靖, 岡⽥ ⾄崇, ⽮⼝ 裕之
    第78回応用物理学会秋季学術講演会 (5p-C21-1) (福岡) 2017. 9. 5
  • GaPN混晶のアップコンバージョン発光
    ⾼橋 渉, ⾼宮 健吾, ⼋⽊ 修平, 伊藤 隆, 秋⼭ 英⽂, ⽮⼝ 裕之
    第78回応用物理学会秋季学術講演会 (6p-PA7-1) (福岡) 2017. 9. 6
  • 伝導帯/中間バンド励起によるGaPN混晶のキャリア再結合過程の光学的評価
    根岸 知華, ドゥラル ハク, 福⽥ 武司, 鎌⽥ 憲彦, ⽮⼝ 裕之
    第78回応用物理学会秋季学術講演会 (6p-A503-3) (福岡) 2017. 9. 6
  • Detection of non-radiative recombination in GaAs:N δ-doped superlattice
    M. D. Haque, Norihiko Kamata, Takeshi Fukuda, Zentaro Honda, Shuhei Yagi, Hiroyuki Yaguchi, and Yoshitaka Okada
    29th International Conference on Defects in Semiconductors (ThB1-1) (Matsue, Japan) 2017. 8. 3
  • Biexciton emission from single quantum-confined structures in N-polar (000-1) InGaN/GaN multiple quantum wells
    Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi, Hidefumi Akiyama, Kanako Shojiki, T. Tanikawa, and Ryuji Katayama
    12th International Conference on Nitride Semiconductors (A2.19) (Strasbourg, France) 2017. 7. 26
  • Radiative and nonradiative recombination processes via intermediate band in GaPN by two-wavelength excited photoluminescence
    Chika Negishi, Norihiko Kamata, Md Dulal Haque, Takeshi Fukuda, and Hiroyuki Yaguchi
    12th International Conference on Nitride Semiconductors (B2.46) (Strasbourg, France) 2017. 7. 26
  • Electrical characterization of n-type GaAs:N δ-doped superlattices
    Ryo Kato, Shuhei Yagi, Hiroyuki Yaguchi, Yoshitaka Okada
    Compound Semiconductor Week 2017 (P1.21) (Berlin, Germany) 2017. 5. 15
  • Carrier recombination levels in intermediate-band type GaPN revealed by time resolved and two-wavelength excited photoluminescence
    Norihiko Kamata, M. Suetsugu, Md Dulal Haque, Shuhei Yagi, Hiroyuki Yaguchi, F. Karlsson, P. O. Holtz
    Compound Semiconductor Week 2017 (B5.6) (Berlin, Germany) 2017. 5. 17
  • ルブレン単結晶上の有機鉛ペロブスカイトのエピタキシャル成長
    阿内 悠人, 宮寺 哲彦, 小金澤 智之, 近松 真之, 吉田 郵司, 矢口 裕之
    第64回応用物理学会春季学術講演会 (14p-313-2) (横浜) 2017. 3. 14
  • DRCN5T/PCBMバルクヘテロ接合膜の溶媒蒸気アニーリング過程のその場観察
    新井 康司, 宮寺 哲彦, 小金澤 智之, 秋山 雄希, 橘 浩昭, 吉田 郵司, 近松 真之, 八木 修平, 矢口 裕之
    第64回応用物理学会春季学術講演会 (16p-F201-3) (横浜) 2017. 3. 16
  • 中間バンド型GaPN混晶でのキャリア再結合過程の光学的評価
    根岸 知華, ドゥラル ハク, 鎌田 憲彦, 矢口 裕之
    第64回応用物理学会春季学術講演会 (14p-411-13) (横浜) 2017. 3. 14
  • n型GaAs:N δドープ超格子の電気的特性評価
    加藤 諒, 八木 修平, 岡田 至崇, 矢口 裕之
    第64回応用物理学会春季学術講演会 (15p-P16-8) (横浜) 2017. 3.15
  • ErドープGaAsからの発光のMBE成長温度依存性
    五十嵐 大輔, 高宮 健吾, 八木 修平, 伊藤 隆, 秋山 英文, 矢口 裕之
    第64回応用物理学会春季学術講演会 (17p-P2-8) (横浜) 2017. 3. 17
  • 1 eV帯InGaAs:N δドープ超格子の作製
    梅田 峻平, 八木 修平, 宮下 直也, 岡田 至崇, 矢口 裕之
    第64回応用物理学会春季学術講演会 (14p-B6-9) (横浜) 2017. 3. 14
  • Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique
    Shuhei Yagi, Yoshitaka Okada, Hiroyuki Yaguchi
    SPIE Photonics West OPTO (10099-14) (San Francisco, USA) 2017. 1. 31