論文 1991

• Kinetics of Ge segregation in the presence of Sb during molecular beam epitaxy
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki, Ryoichi Ito
  Materials Research Society Symposium Proceedings Vol. 220, pp. 217-222 (1991).
  DOI: 10.1557/PROC-220-217
• Suppression of interfacial mixing by Sb deposition in Si/Ge strained-layer superlattices
  Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Takayuki Igarashi, Yasuhiro Shiraki, Ryoichi Ito
  Materials Research Society Symposium Proceedings Vol. 220, pp. 193-197 (1991).
  DOI: 10.1557/PROC-220-193
• Initial oxidation of MBE-grown Si surfaces
  Takayuki Igarashi, Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki, Ryoichi Ito, Takeko Hattori
  Materials Research Society Symposium Proceedings Vol. 220, pp. 35-39 (1991).
  DOI: 10.1557/PROC-220-35
• Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation
  Ken Fujita, Susumu Fukatsu, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  Applied Physics Letters Vol. 59, No. 18, pp. 2240-2241 (1991).
  DOI: 10.1063/1.106082
• Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
  Susumu Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Yasuhiro Shiraki and Ryoichi Ito
  Applied Physics Letters Vol. 59, No. 17, pp. 2103-2105 (1991).
  DOI: 10.1063/1.106412
• Strain Relaxation in MBE-Grown Si_1-xGe_x/Si(100) Heterostructures by Annealing
  Hiroyuki Yaguchi, Ken Fujita, Susumu Fukatsu, Yasuhiro Shiraki and Ryoichi Ito
  Japanese Journal of Applied Physics Vol. 30, No. 8B, pp. L1450-L1453 (1991).
  DOI: 10.1143/JJAP.30.L1450