Yaguchi

論文 1994


  • Characterization of Ge/SiGe Strained-Barrier Quantum Well Structures Using Photoreflectance Spectroscopy
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Physical Review B, Vol. 49, No. 11, pp. 7394-7399 (1994).
    DOI: 10.1103/PhysRevB.49.7394
  • Formation of facetted heterointerfaces of cubic GaN grown on GaAs(001) by metalorganic vapor phase epitaxy
    Noriyuki Kuwano, Kenki Kobayashi, Y. Takeichi, Kensuke Oki, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, and Yasuhiro Shiraki
    Electron Microscopy Vol. 2A/2B, pp. 619-620 (1994).
  • Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 87-92 (1994).
    DOI: 10.1016/0022-0248(94)91033-2
  • Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures
    Kazunobu Ota, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 819-823 (1994).
    DOI: 10.1016/0022-0248(94)91148-7
  • Metalorganic vapor phase epitaxial growth and luminescence properties of GaAs/GaAsP quantum wires
    Wugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Kazumi Wada, Yasuhiro Shiraki and Ryoichi Ito
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 702-706 (1994).
    DOI: 10.1016/0022-0248(94)91130-4
  • Surface orientation dependence of growth rate of Cubic GaN
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Journal of Crystal Growth Vol. 145, No. 1-4, pp. 197-202 (1994).
    DOI: 10.1016/0022-0248(94)91050-2
  • Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
    Hiroyuki Yaguchi, Shigeki Hashimoto, Takashi Sugita, Yujiro Hara, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 108-110 (1994).
    DOI: 10.7567/SSDM.1994.S-I-9-1
  • MOVPE growth of strained GaP1-xNx and GaP1-xNx/GaP quantum wells
    Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Institute of Physics Conference Series Vol. 136, pp. 637-642 (1994).
  • Determination of band offsets in GaAsP/GaP strained-layer quantum well structures using photoreflectance and photoluminescence spectroscopy
    Yujiro Hara, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Institute of Physics Conference Series Vol. 136, pp. 361-366 (1994).
  • Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
    Hiroyuki Yaguchi, Kaori Tai, Keizo Takemasa, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 33, 4B, pp. 2353-2356 (1994).
    DOI: 10.1143/JJAP.33.2353
  • Temperature dependence of photoluminescence linewidth in GaAs/GaAsP strained-layer quantum well structures
    Xiong Zhang, Yasuhiro Shiraki, Hiroyuki Yaguchi, Kentaro Onabe and Ryoichi Ito
    Journal of Vacuum Science and Technology B Vol. 12, No. 4, pp. 2293-2298 (1994).
    DOI: 10.1116/1.587755
  • Photoluminescence study of (111)-oriented GaAs/GaAsP strained-layer quantum well structure
    Xiong Zhang, Koichi Karaki, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito and Yasuhiro Shiraki
    Applied Physics Letters Vol. 64, No. 12, pp. 1555-1557 (1994).
    DOI: 10.1063/1.111991
  • Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
    Noriyuki Kuwano, Kenki Kobayashi, Kensuke Oki, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    Japanese Journal of Applied Physics Vol. 33, No. 6A, pp. 3415-3416 (1994).
    DOI: 10.1143/JJAP.33.3415
  • Valence-Subband Level Crossing in GaAs/GaAsP Strained-Barrier Quantum Well Structures Observed by Circularly Polarized Photoluminescence Excitation Spectroscopy
    Hiroyuki Yaguchi, Kazunobu Ota, Yutaka Takahashi, Koji Muraki, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Solid-State Electronics Vol. 37, No. 4-6, pp. 915-918 (1994).
    DOI: 10.1016/0038-1101(94)90325-5
  • Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
    Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki and Ryoichi Ito
    Japanese Journal of Applied Physics Vol. 33, No. 1B, pp. 694-697 (1994).
    DOI: 10.1143/JJAP.33.694
  • Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
    Noriyuki Kuwano, Yoshiyuki Nagatomo, Kenki Kobayashi, Kensuke Oki, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe and Yasuhiro Shiraki
    Japanese Journal of Applied Physics Vol. 33, No. 1A, pp. 18-22 (1994).
    DOI: 10.1143/JJAP.33.18